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Infineon RF Bipolar Transistor NPN 35 mA 6 V 3-Pin TSFP BFR360FH6327XTSA1

Category Bipolar Transistors Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 0.55mm
Length 1.2mm
Model BFR360FH6327XTSA1
Width 0.8mm
Mount Type Surface
Series BFR360F
Maximum Operating Temperature 150°C
Package Type TSFP
Pin Count 3
Maximum Collector Emitter Voltage Vceo 6V
Minimum DC Current Gain hFE 90
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 2V
Maximum Collector Base Voltage VCBO 15V
Maximum Power Dissipation Pd 210mW
Maximum DC Collector Current Idc 35mA
Transistor Configuration Single
Maximum Transition Frequency ft 14GHz

Key Features

  • The transistor operates with a maximum power dissipation of 210 mW.
  • It has a maximum transition frequency of 14 GHz for RF applications.
  • The device is surface mount type with a 3-pin TSFP package.
  • The transistor features a minimum DC current gain (hFE) of 90.
  • Operating temperature can reach up to 150°C, suitable for industrial use.
  • The transistor provides reliable performance with maximum collector base voltage of 15 V.
  • Designed with an emitter base voltage maximum of 2 V and single transistor configuration.

Product Description

Infineon BFR360FH6327XTSA1 is a high-performance RF bipolar transistor in an NPN configuration designed for electronic circuits requiring amplification at high frequencies. It supports a maximum direct current (DC) collector current of 35 mA and withstands collector emitter voltage up to 6 V, making it suitable for a range of low power radio frequency applications.

The transistor is supplied in a 3-pin thin small flat package (TSFP), supporting surface mount technology (SMT) for compact PCB designs. The minimum current gain (hFE) of 90 ensures efficient amplification while maintaining signal integrity. Its maximum power dissipation is specified at 210 mW, ensuring reliability under normal operating conditions.

The device features a maximum transition frequency (ft) of 14 GHz, making it well-suited for applications operating in the radio frequency spectrum. It operates reliably at temperatures up to 150°C, making it appropriate for use in challenging industrial and manufacturing environments.

Physical dimensions of the transistor include a height of 0.55 mm, length of 1.2 mm, and width of 0.8 mm, enabling it to fit into compact electronic designs. The maximum collector base voltage is 15 V and emitter base voltage is 2 V, supporting electrical stability across varied loads.

This transistor is ideal for use in industrial, laboratory, telecommunications, and electronic manufacturing applications where high frequency and stable transistor operation is required.

The transistor operates at a collector current of 35 mA with 6 V maximum collector-emitter voltage. Surface mount 3-pin TSFP package supports compact PCB assembly. High frequency operation up to 14 GHz (ft) enables RF applications.

Minimum DC current gain of 90 for effective amplification. Maximum power dissipation of 210 mW ensures thermal reliability. Operating temperature range up to 150°C suits industrial conditions. Compact physical dimensions help in space-sensitive electronic designs.

Explore the full range of Infineon Bipolar Transistors and related semiconductor components on EnvMart for your industrial and electronic design needs.

Infineon RF Bipolar Transistor NPN 35 mA 6 V 3-Pin TSFP BFR360FH6327XTSA1
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Frequently Asked Questions

The maximum power dissipation of the Infineon BFR360FH6327XTSA1 transistor is 210 mW.

This model has a maximum transition frequency of 14 GHz, making it suitable for RF applications.

The physical dimensions of this transistor are 0.55 mm in height, 1.2 mm in length, and 0.8 mm in width.

The maximum collector-emitter voltage (Vceo) for this transistor is 6 V.

The minimum DC current gain (hFE) of the BFR360FH6327XTSA1 is 90.

The maximum collector base voltage (VCBO) is 15 V.

The maximum emitter base voltage (VEBO) for this model is 2 V.

This transistor can operate at a maximum temperature of 150°C, suitable for industrial conditions.

The BFR360FH6327XTSA1 is supplied in a 3-pin thin small flat package (TSFP) for surface mount technology.

The maximum direct current (DC) collector current for this transistor is 35 mA.

This transistor is suitable for industrial, laboratory, telecommunications, and electronic manufacturing applications requiring high frequency and stable operation.

The transistor is designed in a single NPN configuration.

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