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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 0.55mm |
| Length | 1.2mm |
| Model | BFR360FH6327XTSA1 |
| Width | 0.8mm |
| Mount Type | Surface |
| Series | BFR360F |
| Maximum Operating Temperature | 150°C |
| Package Type | TSFP |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 6V |
| Minimum DC Current Gain hFE | 90 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 2V |
| Maximum Collector Base Voltage VCBO | 15V |
| Maximum Power Dissipation Pd | 210mW |
| Maximum DC Collector Current Idc | 35mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 14GHz |
Infineon BFR360FH6327XTSA1 is a high-performance RF bipolar transistor in an NPN configuration designed for electronic circuits requiring amplification at high frequencies. It supports a maximum direct current (DC) collector current of 35 mA and withstands collector emitter voltage up to 6 V, making it suitable for a range of low power radio frequency applications.
The transistor is supplied in a 3-pin thin small flat package (TSFP), supporting surface mount technology (SMT) for compact PCB designs. The minimum current gain (hFE) of 90 ensures efficient amplification while maintaining signal integrity. Its maximum power dissipation is specified at 210 mW, ensuring reliability under normal operating conditions.
The device features a maximum transition frequency (ft) of 14 GHz, making it well-suited for applications operating in the radio frequency spectrum. It operates reliably at temperatures up to 150°C, making it appropriate for use in challenging industrial and manufacturing environments.
Physical dimensions of the transistor include a height of 0.55 mm, length of 1.2 mm, and width of 0.8 mm, enabling it to fit into compact electronic designs. The maximum collector base voltage is 15 V and emitter base voltage is 2 V, supporting electrical stability across varied loads.
This transistor is ideal for use in industrial, laboratory, telecommunications, and electronic manufacturing applications where high frequency and stable transistor operation is required.
The transistor operates at a collector current of 35 mA with 6 V maximum collector-emitter voltage. Surface mount 3-pin TSFP package supports compact PCB assembly. High frequency operation up to 14 GHz (ft) enables RF applications.
Minimum DC current gain of 90 for effective amplification. Maximum power dissipation of 210 mW ensures thermal reliability. Operating temperature range up to 150°C suits industrial conditions. Compact physical dimensions help in space-sensitive electronic designs.
Explore the full range of Infineon Bipolar Transistors and related semiconductor components on EnvMart for your industrial and electronic design needs.
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