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Nexperia N-Channel MOSFET, 55 A, 25 V Enhancement Mode, Surface Mount, 8-Pin LFPAK Package PSMN9R0-25MLC,115
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | Nexperia |
| Height | 0.9mm |
| Length | 3.4mm |
| Model | PSMN9R0-25MLC,115 |
| Width | 2.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 11.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 11.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- This MOSFET is packaged in an 8-pin LFPAK surface mount package.
- Featuring enhancement mode operation for high-efficiency switching.
- Has a maximum continuous drain current of 55 amperes for robust power handling.
- The device supports a maximum drain-source voltage of 25 volts.
- Typical gate charge is 11.7 nanocoulombs, enabling fast switching speeds.
- Maximum power dissipation rating is 45 watts for reliable thermal performance.
- Operating temperature range spans from -55°C to 175°C, suitable for harsh environments.
- Compact dimensions of 3.4 mm length, 2.7 mm width, and 0.9 mm height.
Product Description
Nexperia PSMN9R0-25MLC,115 is a high-performance N-Channel MOSFET designed for demanding industrial and electronic applications requiring efficient power switching and robust current capacity.
Featuring enhancement mode channel operation, it supports a maximum continuous drain current of 55 A and a drain-source voltage up to 25 V, making it suitable for medium power circuits.
The device comes in a compact 8-pin LFPAK surface mount package, allowing ease of PCB integration and space-saving designs. Its typical gate charge of 11.7 nC allows for fast switching operations, which improves overall circuit efficiency and reduces losses.
The MOSFET can dissipate up to 45 watts of power, ensuring reliable thermal management in industrial, power supply, and consumer electronics contexts. The wide operating temperature range from -55°C to 175°C ensures dependable performance across various environmental conditions.
With dimensions of 3.4 mm length, 2.7 mm width, and 0.9 mm height, this device is optimized for compact and lightweight electronic assemblies. This MOSFET is ideal for use in power management, motor control, DC-DC converters, and switching regulators in industrial and consumer electronics.
The surface mount design simplifies manufacturing and enhances circuit reliability. Robust electrical and thermal specifications support demanding operational profiles. Explore more high-quality semiconductor components and MOSFETs to meet your industrial and commercial application needs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 55 amperes.
It supports a maximum drain-source voltage of 25 volts.
This MOSFET has dimensions of 3.4 mm in length, 2.7 mm in width, and 0.9 mm in height.
The typical gate charge is 11.7 nanocoulombs, which enables fast switching speeds.
It has a maximum power dissipation rating of 45 watts.
The operating temperature range spans from -55°C to 175°C.
This model is packaged in an 8-pin LFPAK surface mount package.
It is an N-channel MOSFET, designed for enhancement mode operation.
The maximum gate-source voltage is -20 to +20 volts.
The maximum drain-source resistance is 11.3 milliohms.
The country of origin for this model is the Philippines.
It is suitable for power management, motor control, DC-DC converters, and switching regulators in industrial and consumer electronics.
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