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onsemi Infrared Phototransistor, Surface Mount 2-Pin Subminiature Package, 12° Beam Angle QSB363

Category Phototransistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Operating Temperature -40 to +85 °C
Height 3mm
Length 2.7mm
Model QSB363
Packaging Tape & Reel
Width 2.2mm
Mount Type Surface
Maximum Operating Temperature 85°C
Package Type Subminiature
Minimum Operating Temperature -40°C
Number Of Channels 1
Number of Pins 2
Typical Fall Time 15μs
Peak Wavelength 940nm
Spectrums Detected Infrared
Angle of Half Sensitivity 12 °
Collector Current 1.5mA
Maximum Dark Current 100nA
Collector Emitter Voltage 30V
Emitter Collector Voltage 5V
Medium wide beam angle 24°
Lead form options gull-wing, yoke, z-bend

Key Features

  • The QSB363 features a 12° angle of half sensitivity, providing focused infrared detection.
  • It operates efficiently within a temperature range of -40°C to 85°C.
  • Designed in a compact subminiature surface mount package measuring 3mm height, 2.7mm length, and 2.2mm width.
  • Collector current rating up to 1.5mA with a maximum collector-emitter voltage of 30V.
  • High sensitivity with a peak wavelength at 940nm and typical rise and fall times of 15μs.
  • Available in tape and reel packaging for automated assembly processes.
  • Lead form options include gull-wing, yoke, and z-bend, enhancing versatility in PCB mounting.

Product Description

The onsemi QSB363 is a high-quality infrared phototransistor designed for industrial and electronic applications requiring precise optical sensing and detection. Encased in a compact subminiature surface mount package, the device supports efficient integration into densely populated circuit boards.

With a narrow 12° beam angle, the QSB363 enables focused infrared reception, ideal for remote controls, optical switches, and sensor arrays. Its sensitivity peaks at a wavelength of 940nm, providing reliable detection in various ambient lighting conditions.

The phototransistor features rapid response times of 15 microseconds for both rise and fall intervals, ensuring quick signal transitions essential for high-speed detection tasks. Operating reliably over a broad temperature range from -40°C to 85°C, it is well-suited for automotive, industrial, and consumer electronics environments.

Supporting collector currents up to 1.5mA and a collector-emitter voltage rating of 30V, the device ensures robust performance under typical operating conditions. The black plastic package includes a daylight filter to minimize interference, and it is available with multiple lead form options including gull-wing, yoke, and z-bend to accommodate different PCB layouts.

Packaging on tape and reel supports easy automated pick-and-place assembly, enhancing manufacturing efficiency and quality control. The compact 2-pin design, combined with onsemi's manufacturing quality, makes the QSB363 an excellent choice for designers aiming for reliability and precision in infrared photodetection applications.

The QSB363 features a 12° angle of half sensitivity, providing focused infrared detection. It operates efficiently within a temperature range of -40°C to 85°C. Designed in a compact subminiature surface mount package measuring 3mm height, 2.7mm length, and 2.2mm width.

Collector current rating up to 1.5mA with a maximum collector-emitter voltage of 30V. High sensitivity with a peak wavelength at 940nm and typical rise and fall times of 15μs. Available in tape and reel packaging for automated assembly processes.

Lead form options include gull-wing, yoke, and z-bend, enhancing versatility in PCB mounting.

This infrared phototransistor is extensively used in electronic manufacturing, industrial measurement and control, automotive sensing solutions, consumer electronics, and optoelectronic systems. Environmentally robust and manufactured under strict quality standards, the QSB363 is a dependable component for demanding applications.

Browse the Electronics Components and Phototransistors category for more innovative and reliable electronic components at EnvMart.

onsemi Infrared Phototransistor, Surface Mount 2-Pin Subminiature Package, 12° Beam Angle QSB363
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Frequently Asked Questions

The QSB363 operates efficiently within a temperature range of -40°C to 85°C.

The maximum collector-emitter voltage for the QSB363 is 30V.

This model has a peak wavelength sensitivity at 940nm, making it suitable for infrared applications.

The QSB363 measures 3mm in height, 2.7mm in length, and 2.2mm in width.

The collector current rating for the QSB363 is up to 1.5mA.

It is available in tape and reel packaging, which supports automated assembly processes.

Lead form options for this model include gull-wing, yoke, and z-bend.

The QSB363 features a 12° angle of half sensitivity, providing focused infrared detection.

The typical rise and fall times for the QSB363 are both 15μs.

This infrared phototransistor is suitable for applications in remote controls, optical switches, and sensor arrays.

The maximum dark current for this model is 100nA.

The QSB363 is designed for surface mounting.

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