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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.1mm |
| Length | 2.2mm |
| Model | BC848CDW1T1G |
| Width | 1.35mm |
| Mount Type | Surface |
| Series | BC848CDW1 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-363 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | 30V |
| Minimum DC Current Gain hFE | 200 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 30V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 380mW |
| Maximum DC Collector Current Idc | 100mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
The onsemi BC848CDW1T1G is a general purpose NPN bipolar transistor engineered for discrete semiconductor applications. It features a maximum DC collector current of 100 mA and a collector emitter voltage rating of 30 V, making it suitable for a variety of low-power switching and amplification tasks. Packaged in a compact 6-pin SOT-363 surface mount format, it supports dense PCB layouts for modern electronics designs.
This transistor provides a minimum DC current gain (hFE) of 200 which ensures reliable amplification efficiency. With a maximum power dissipation of 380 mW and a maximum transition frequency of 100 MHz, it is ideal for circuits requiring moderate power handling and high frequency response. The device also operates within a wide temperature window from -55°C to 150°C, supporting applications exposed to varying environmental conditions.
Additionally, the BC848CDW1T1G complies with the stringent automotive industry standard AEC-Q101, certifying its quality and reliability for automotive electronics projects. The physical size is extremely compact with a length of 2.2 mm, width of 1.35 mm, and height of 1.1 mm, enabling integration into compact electronic systems.
Maximum collector current: 100 mA. Collector emitter voltage: 30 V. Surface mount SOT-363 package with 6 pins. High current gain (hFE) of at least 200. Operating temperature range -55°C to 150°C. Maximum power dissipation: 380 mW.
High transition frequency of 100 MHz. Automotive standard AEC-Q101 compliant. Compact dimensions for space-constrained designs.
This transistor is commonly used in industrial, automotive, and consumer electronics for switching and amplification. It is ideal for applications demanding efficient performance with a small form factor and robustness across temperatures. EnvMart offers this high-quality onsemi BC848CDW1T1G transistor suitable for advanced electronic designs.
Explore more products in our Bipolar Transistors category.
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