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onsemi Small Signal NPN Transistor 80 V DC, 500 mA, 225 mW Power Dissipation, 3-Pin SOT-23 Package MMBT8099LT1G

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onsemi Small Signal NPN Transistor 80 V DC, 500 mA, 225 mW Power Dissipation, 3-Pin SOT-23 Package MMBT8099LT1G

Name: onsemi Small Signal NPN Transistor 80 V DC, 500 mA, 225 mW Power Dissipation, 3-Pin SOT-23 Package MMBT8099LT1G
Brand: onsemi
SKU: 315305
Price: 0.05 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Height	1.01mm
Length	3.04mm
Model	MMBT8099LT1G
Width	1.4mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	80V dc
Minimum DC Current Gain hFE	75
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	80V dc
Maximum Power Dissipation Pd	225mW
Maximum DC Collector Current Idc	500mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

The transistor supports a maximum collector-emitter voltage of 80 V DC.
Maximum power dissipation is rated at 225 mW for reliable performance.
Featuring a transition frequency of up to 100 MHz suitable for high-frequency applications.
Compact SOT-23 package dimensions with a length of 3.04 mm and width of 1.4 mm.
Operating temperature range from -55°C to 150°C ensures durability in harsh environments.
Surface mount package type enables efficient PCB assembly and space-saving designs.
Minimum DC current gain (hFE) of 75 ensures strong amplification characteristics.
Country of origin is China.

Product Description

onsemi MMBT8099LT1G is a small signal NPN bipolar transistor housed in a 3-pin SOT-23 surface mount package. It is engineered to handle a maximum continuous collector current of 500 mA and withstand up to 80 V DC collector-emitter voltage, making it suitable for moderate power switching and amplification applications.

This device supports a maximum power dissipation of 225 mW and offers a transition frequency of 100 MHz, allowing effective high-frequency operation in electronic circuits. Its compact dimensions (length 3.04 mm, width 1.4 mm, height 1.01 mm) make it ideal for space-constrained PCB layouts.

The transistor operates reliably over a wide temperature range from -55°C up to 150°C, accommodating industrial and commercial environments. It features a minimum DC current gain (hFE) of 75, providing good amplification capability for small signal applications.

Designed for surface mount technology, the SOT-23 package supports efficient automated manufacturing processes. While this part itself is not automotive standard certified, part numbers with S or NSV prefix from onsemi carry automotive qualification to AEC-Q101 standards.

The transistor is manufactured in China and is supplied new, suitable for industrial, laboratory, electronic manufacturing, instrumentation, and consumer electronics development. The transistor supports a maximum collector-emitter voltage of 80 V DC.

Maximum power dissipation is rated at 225 mW for reliable performance. Featuring a transition frequency of up to 100 MHz suitable for high-frequency applications. Compact SOT-23 package dimensions with a length of 3.04 mm and width of 1.4 mm.

Operating temperature range from -55°C to 150°C ensures durability in harsh environments. Surface mount package type enables efficient PCB assembly and space-saving designs. Minimum DC current gain (hFE) of 75 ensures strong amplification characteristics.

Country of origin is China. Explore the wide selection of Bipolar Transistors, semiconductors, and related electronic components on EnvMart for all your industrial and commercial requirements.