onsemi PNP Power Transistor TO-220, 3-Pin, -100 V, -3 A, 28 W, 150°C MJF32CG

The onsemi MJF32CG is a high-performance PNP power transistor housed in a TO-220 package with 3 pins, engineered for durability and reliable operation. It supports a maximum DC collector current of -3 A and withstands a collector-emitter voltage up to -100 V, making it suitable for various power electronics and switching applications with high voltage and current requirements.

This transistor offers a maximum power dissipation of 28 W, allowing for efficient thermal management in demanding electrical circuits. The device supports a broad operating temperature range from -65°C to 150°C, accommodating harsh industrial and commercial environments.

Featuring a maximum transition frequency of 1 MHz and a minimum DC current gain of 10, the MJF32CG transistor delivers dependable amplification and switching speed, essential for power control circuits. The single transistor, PNP polarity configuration, together with through-hole mounting capability, enhances its versatility in PCB assembly and repair operations.

The transistor’s dimensions (length 10.63 mm, width 4.9 mm, height 16.12 mm) make it compact and easy to integrate into various electronic devices. It does not comply with specific automotive standards, positioning it primarily for power electronic and industrial machinery use rather than automotive applications.

Applications of the onsemi MJF32CG PNP power transistor include industrial control systems, power supplies, electronic manufacturing, and other engineering use cases requiring robust bipolar transistors. Its combination of voltage tolerance, current capacity, and power dissipation make it a reliable component in high-demand environments.

High maximum power dissipation of 28 W ensures reliable operation under demanding conditions. TO-220 package with 3 pins supports through-hole mounting for easy assembly. Operates efficiently in temperatures ranging from -65°C to 150°C.

Maximum transition frequency of 1 MHz suitable for switching applications. Minimum DC current gain (hFE) of 10 guarantees amplification capabilities. Single transistor configuration with PNP polarity for power applications.

Safe maximum voltages include 100 V (collector-base) and 5 V (emitter-base). Compact dimensions: Length 10.63 mm, Width 4.9 mm, Height 16.12 mm for space-saving designs. Ideal for industrial, power control, and electronic component manufacturing environments.

Non-automotive standard transistor designed for general semiconductor applications. Explore more high-quality semiconductor components and Power Transistors in the Electronics & Electricals category on EnvMart for your industrial and manufacturing needs.