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onsemi 8 A NPN Power Transistor 450 V, 3-Pin TO-220 MJE18008G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 15.75mm |
| Length | 10.28mm |
| Model | MJE18008G |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | MJE18008 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 450V |
| Minimum DC Current Gain hFE | 5 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 9V |
| Maximum Collector Base Voltage VCBO | 10V dc |
| Maximum Power Dissipation Pd | 125W |
| Maximum DC Collector Current Idc | 8A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
Key Features
- Maximum DC collector current of 8 Amperes providing robust power handling.
- Collector-emitter voltage rating of 450 Volts ensuring high voltage tolerance.
- Power dissipation capacity up to 125 Watts for efficient thermal management.
- Maximum operating temperature up to 150 degrees Celsius suitable for demanding environments.
- Single transistor configuration with NPN polarity and low minimum DC current gain of 5.
- Mount type is through-hole for secure PCB mounting.
- Maximum transition frequency of 1 MHz for moderate switching applications.
- Designed without automotive qualification but robust for industrial electronic use.
Product Description
onsemi MJE18008G is a high voltage, high current NPN power transistor with a maximum collector current of 8 A and collector-emitter voltage of 450 V, designed in a standard 3-pin TO-220 through-hole package. It provides a power dissipation of 125 W and operates reliably up to 150 degrees Celsius, making it suitable for use in industrial, electrical power control, and electronic circuitry applications.
The transistor features a single configuration with a low DC current gain (minimum hFE of 5) and voltage ratings including collector base voltage of 10 V and emitter base voltage of 9 V, ensuring robust performance across varying load conditions. Its maximum transition frequency of 1 MHz allows its use in power switching and moderate-frequency amplifier stages.
With dimensions of 15.75 mm height, 4.82 mm width, and 10.28 mm length, this TO-220 package ensures easy mounting and heat dissipation via its through-hole mount design. It is not automotive qualified, but it is ideal for power management in industrial and laboratory equipment, HVAC controls, and manufacturing machinery requiring reliable discrete power transistors.
Maximum collector current of 8A suitable for high current applications. Collector emitter voltage rating of 450V for high voltage operation. Power dissipation rated at 125W enabling efficient heat management. Wide operating temperature range from -65°C to 150°C.
TO-220 package allows easy integration into electronic assembly. Through-hole mount type for secure and durable PCB installation. Single NPN transistor configuration optimized for power switching. Moderate frequency switching capabilities with 1MHz transition frequency.
Compact dimensions for space-efficient electronic designs.
This onsemi transistor is a reliable discrete bipolar component best suited for power electronics in industrial equipment, power supplies, and signal amplification. It meets the demands of manufacturing, HVAC, and electrical control systems requiring durable transistor solutions. Discover more products in the Power Transistors category on EnvMart for your next electrical project.
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Frequently Asked Questions
The maximum collector current for this model is 8 Amperes, making it suitable for high current applications.
This transistor has a collector-emitter voltage rating of 450 Volts, ensuring it can handle high voltage operations.
It has a power dissipation capacity of up to 125 Watts, allowing for efficient thermal management during operation.
The maximum operating temperature for this unit is 150 degrees Celsius, suitable for demanding environments.
This model is designed in a TO-220 package with a through-hole mount type for secure PCB installation.
The minimum DC current gain (hFE) for this transistor is 5, which is adequate for various applications.
The dimensions of this transistor are 15.75 mm in height, 4.82 mm in width, and 10.28 mm in length.
The maximum transition frequency for this model is 1 MHz, allowing for moderate frequency switching applications.
It supports a maximum collector-base voltage of 10 V and a maximum emitter-base voltage of 9 V.
No, this transistor is not automotive qualified but is suitable for industrial electronic use.
This model is ideal for power management in industrial equipment, power supplies, and signal amplification.
The country of origin for this power transistor is India.
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