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onsemi Transistor 4 A NPN 100 V 3-Pin TO-225 MJE243G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 27.73mm
Length 7.8mm
Model MJE243G
Width 3mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-225
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 100V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 100V
Maximum Power Dissipation Pd 15W
Maximum DC Collector Current Idc 4A
Transistor Configuration Single
Maximum Transition Frequency ft 10MHz

Key Features

  • Supports a maximum DC collector current of 4 amperes.
  • Can handle collector-emitter voltages up to 100 volts.
  • NPN transistor configuration for general-purpose applications.
  • Designed with a 3-pin TO-225 through-hole mount package.
  • Maximum power dissipation of 15 watts for reliable operation.
  • Minimum DC current gain (hFE) of 40 to ensure amplification efficiency.
  • Operates effectively between temperatures of -65°C and 150°C.
  • Maximum transition frequency of 10 MHz suitable for moderate frequency circuits.

Product Description

onsemi MJE243G is a general-purpose NPN bipolar transistor engineered for power and switching applications, capable of handling a maximum collector current of 4 amperes and collector-emitter voltage of 100 volts. It features a three-pin TO-225 through-hole package, making it suitable for PCB mounting in industrial electronic circuits.

This transistor supports a maximum power dissipation of 15 watts, ensuring robust performance in demanding environments. Its minimum DC current gain (hFE) of 40 allows for effective amplification and switching operations with moderate signal frequencies up to 10 MHz.

Suitable for use in audio amplifiers, power regulators, and inverter circuits in sectors like industrial automation, electronics manufacturing, and electrical device repair and assembly.

Operating temperature ranges from -65°C to 150°C, allowing reliability across harsh environmental conditions. Maximum DC Collector Current: 4 A. Maximum Collector-Emitter Voltage: 100 V. Transistor Polarity: NPN configuration.

Package Type: 3-pin TO-225 through-hole package. Maximum Power Dissipation: 15 W. Minimum DC Current Gain: 40. Maximum Transition Frequency: 10 MHz. Operating Temperature Range: -65°C to 150°C. Dimensions: Height 27.73 mm, Length 7.8 mm, Width 3 mm.

onsemi MJE243G is a reliable choice for industrial, laboratory, HVAC, and manufacturing use where robust discrete semiconductor transistors are required. Explore more Bipolar Transistors and NPN power transistor options within the Electronics & Electricals category at EnvMart.

onsemi Transistor 4 A NPN 100 V 3-Pin TO-225 MJE243G
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Frequently Asked Questions

The maximum DC collector current for the MJE243G transistor is 4 amperes.

It can handle collector-emitter voltages up to 100 volts.

This model is designed with a 3-pin TO-225 through-hole mount package.

The operating temperature range for the MJE243G is from -65°C to 150°C.

The maximum power dissipation for this transistor is 15 watts.

It has a minimum DC current gain (hFE) of 40.

The maximum transition frequency is 10 MHz, making it suitable for moderate frequency circuits.

This transistor is suitable for use in audio amplifiers, power regulators, and inverter circuits.

The dimensions are height 27.73 mm, length 7.8 mm, and width 3 mm.

The transistor configuration is NPN.

The maximum emitter-base voltage (VEBO) is 7 volts.

The MJE243G is manufactured in India.

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