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Infineon 210 mA NPN Transistor, 16 V, 3-Pin SOT-23 Package BFR 106 E6327

Category Bipolar Transistors Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1mm
Length 2.9mm
Model BFR 106 E6327
Width 2.4mm
Mount Type Surface
Series BFR106
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo 16V
Minimum DC Current Gain hFE 70
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 3V
Maximum Collector Base Voltage VCBO 20V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 700mW
Maximum DC Collector Current Idc 210mA
Transistor Configuration Single
Maximum Transition Frequency ft 5GHz

Key Features

  • Maximum DC collector current is 210 mA.
  • Maximum collector-emitter voltage rating is 16 V.
  • NPN transistor polarity with single transistor configuration.
  • Maximum power dissipation of 700 mW.
  • Operates up to 5 GHz transition frequency.
  • Compatible with surface mount technology in SOT-23 package.
  • Minimum DC current gain (hFE) of 70.
  • AEC-Q101 automotive grade standard compliance.

Product Description

Infineon BFR 106 E6327 bipolar transistor is designed for efficient amplification applications with a maximum DC collector current of 210 mA and collector-emitter voltage rating of 16 V. This NPN device is housed in the industry-standard 3-pin SOT-23 surface-mount package, facilitating compact and reliable PCB designs.

The transistor delivers a high transition frequency of 5 GHz, making it suitable for high-frequency RF applications in telecommunications, automotive electronics, and general purpose switching. Its power dissipation capability of 700 mW supports operation under demanding conditions.

Featuring a minimum DC current gain of 70, it offers efficient current amplification necessary for analog circuits. The device meets automotive AEC-Q101 standards and is qualified for operation at junction temperatures up to 150°C, ensuring durability in harsh environments.

Its compact form factor measures 2.9 mm in length, 2.4 mm in width, and 1 mm in height allowing flexible integration into dense circuit layouts. The surface mount configuration improves manufacturing efficiency and lifecycle reliability.

Maximum DC collector current is 210 mA. Maximum collector-emitter voltage is 16 V. NPN transistor configuration suitable for amplification and switching. High frequency operation up to 5 GHz transition frequency. Power dissipation of 700 mW ensures sustained performance.

Minimum DC current gain of 70 for effective amplification. Complies with automotive AEC-Q101 standard. Operating temperature range up to 150°C. Compact 3-pin SOT-23 surface-mount package. Small physical dimensions facilitate space saving designs.

This Infineon bipolar transistor is ideal for use in telecommunications infrastructure, automotive electronics, industrial equipment, and consumer devices requiring reliable and high-frequency switching or amplification capabilities. Environmentally and mechanistically robust, the device supports modern electronic manufacturing and design needs.

Explore our extensive range of semiconductor components and Infineon transistors at EnvMart for industrial quality and technical excellence.

Explore more products in our Bipolar Transistors category.

Infineon 210 mA NPN Transistor, 16 V, 3-Pin SOT-23 Package BFR 106 E6327
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Frequently Asked Questions

The maximum DC collector current for this model is 210 mA.

The maximum collector-emitter voltage rating is 16 V.

This transistor operates at a maximum transition frequency of 5 GHz.

It has a maximum power dissipation of 700 mW.

The dimensions of the SOT-23 package are 2.9 mm in length, 2.4 mm in width, and 1 mm in height.

The minimum DC current gain (hFE) is 70.

It complies with the AEC-Q101 automotive standard.

The maximum operating temperature is 150°C.

Yes, it is designed for surface mount technology in a SOT-23 package.

This model uses a single NPN transistor configuration.

The maximum collector-base voltage (VCBO) is 20 V.

This transistor is suitable for high-frequency RF applications in telecommunications, automotive electronics, and general purpose switching.

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