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DiodesZetex P-Channel MOSFET, 3.6 A, 20 V Enhancement, 3-Pin SOT-23 Semiconductor DMP2035U-7
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.1mm |
| Length | 3mm |
| Model | DMP2035U-7 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | DMP2035U |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.6A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 62mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 810mW |
| Typical Gate Charge Qg @ Vgs | 15.4nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1V |
Key Features
- This MOSFET comes in a compact 3-pin SOT-23 package suitable for surface mounting.
- It features an enhancement mode channel with low drain-source resistance of 62 mΩ.
- The device supports a maximum power dissipation of 810 mW, allowing efficient thermal handling.
- Operates reliably across temperatures from -55°C to 150°C, meeting automotive standard AEC-Q101.
- The maximum gate-source voltage is rated at -8 to +8 V, ideal for precise gate control.
- Typical gate charge at Vgs is 15.4 nC, facilitating fast switching performance.
- The MOSFET has forward voltage of approximately -1 V, enhancing conduction characteristics.
- Compact dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height enable easy PCB integration.
Product Description
DiodesZetex DMP2035U-7 is a high-performance P-Channel MOSFET transistor designed for surface mount technology in electronics applications. It supports a continuous drain current of 3.6 A and can sustain a maximum drain-source voltage of 20 V, making it suitable for low voltage switching and amplification tasks in power management circuits.
The device is housed in a 3-pin SOT-23 package, offering compact size and ease of integration on printed circuit boards. It operates in enhancement mode with a low maximum drain-source resistance (Rds) of 62 mΩ, providing low conduction losses.
Its maximum power dissipation of 810 mW ensures thermal stability during high load operation, while the device can reliably function within a wide temperature range from -55°C to 150°C, including compliance with automotive standard AEC-Q101, making it suitable for automotive electronics applications.
The gate characteristics include a maximum gate-source voltage of -8 to +8 V and a typical gate charge of 15.4 nC at Vgs, enabling efficient and stable gate switching, ideal for fast switching circuits.
This MOSFET comes in a compact 3-pin SOT-23 package suitable for surface mounting. It features an enhancement mode channel with low drain-source resistance of 62 mΩ. The device supports a maximum power dissipation of 810 mW, allowing efficient thermal handling.
Operates reliably across temperatures from -55°C to 150°C, meeting automotive standard AEC-Q101. The maximum gate-source voltage is rated at -8 to +8 V, ideal for precise gate control. Typical gate charge at Vgs is 15.4 nC, facilitating fast switching performance.
The MOSFET has forward voltage of approximately -1 V, enhancing conduction characteristics. Compact dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height enable easy PCB integration.
This product is primarily used in industrial, automotive, and electronic manufacturing for efficient power switching, signal amplification, and load driving applications. Its automotive-grade standard makes it appropriate for use in vehicle electronic systems.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.6 A.
It can sustain a maximum drain-source voltage of 20 V.
This model comes in a 3-pin SOT-23 package suitable for surface mounting.
It operates reliably across a temperature range from -55°C to 150°C.
The maximum power dissipation is rated at 810 mW.
The typical gate charge at Vgs is 15.4 nC.
The maximum gate-source voltage is rated at -8 to +8 V.
It features a low maximum drain-source resistance of 62 mΩ.
Yes, it meets the automotive standard AEC-Q101.
The dimensions are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.
It has an enhancement mode P-channel type channel.
It is suitable for low voltage switching, amplification tasks, and power management circuits in industrial and automotive applications.
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