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onsemi Small Signal NPN Transistor 100 mA, 45 V, 6-Pin SOT-363 Package BC847BDW1T1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 2.2mm
Model BC847BDW1T1G
Width 2.2mm
Mount Type Surface
Series BC847BDW1
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -55°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 380mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 100MHz
onsemi SBC847CDW1G Dual NPN Transistor, 100 mA, 45 V, 6-Pin SOT-363Brand onsemi

Key Features

  • Maximum collector current of 100 mA enables moderate power handling.
  • Maximum collector-emitter voltage rating of 45 V ensures robustness in various circuits.
  • Compact 6-pin SOT-363 surface-mount package suitable for space-constrained designs.
  • Minimum DC current gain hFE of 200 guarantees efficient transistor operation.
  • Wide operating temperature range from -55°C to 150°C for harsh environments.
  • High transition frequency of 100 MHz suitable for high-frequency applications.
  • Automotive qualified with AEC-Q101 standard assuring reliability and quality.
  • Small dimensions (2.2 mm length, 2.2 mm width, 1.1 mm height) for PCB space savings.

Product Description

onsemi BC847BDW1T1G is a high-quality small signal NPN transistor optimized for amplification and switching applications in electronic circuits. It supports a maximum collector current of 100 mA and sustains a maximum collector-emitter voltage of 45 V, making it suitable for low-power to medium-power uses.

The transistor is housed in a 6-pin SOT-363 surface-mount package, allowing efficient PCB space utilization and enabling compact electronic device design. With a minimum DC current gain (hFE) of 200, it offers effective signal amplification and reliable operation even at elevated frequencies.

Its wide operating temperature range from -55°C up to 150°C permits deployment in demanding industrial, automotive, and commercial electronics environments. The high transition frequency of 100 MHz further expands its applicability to high-frequency circuits.

Certified to automotive standard AEC-Q101, the BC847BDW1T1G guarantees enhanced quality, reliability, and performance making it an ideal choice for automotive electronics and other high-demand applications.

Physical dimensions of 2.2 mm length, 2.2 mm width, and 1.1 mm height contribute to its compactness and versatility in PCB layout designs.

This transistor is a trusted component for embedded systems, mobile electronics, consumer devices, control systems, and automotive electronic modules, where reliable performance and quality are critical.

Maximum collector current of 100 mA enables moderate power handling. Maximum collector-emitter voltage rating of 45 V ensures robustness in various circuits. Compact 6-pin SOT-363 surface-mount package suitable for space-constrained designs.

Minimum DC current gain hFE of 200 guarantees efficient transistor operation. Wide operating temperature range from -55°C to 150°C for harsh environments. High transition frequency of 100 MHz suitable for high-frequency applications.

Automotive qualified with AEC-Q101 standard assuring reliability and quality. Small dimensions (2.2 mm length, 2.2 mm width, 1.1 mm height) for PCB space savings. Explore more on semiconductor transistors at EnvMart for industrial, automotive, and electronic development needs.

Explore more products in our Bipolar Transistors category.

onsemi Small Signal NPN Transistor 100 mA, 45 V, 6-Pin SOT-363 Package BC847BDW1T1G
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Frequently Asked Questions

The maximum collector current for the BC847BDW1T1G is 100 mA, allowing for moderate power handling in various applications.

This model has a maximum collector-emitter voltage rating of 45 V, ensuring robustness in various circuits.

The minimum DC current gain (hFE) of the BC847BDW1T1G is 200, which guarantees efficient transistor operation.

It operates within a wide temperature range from -55°C to 150°C, suitable for harsh environments.

The BC847BDW1T1G has a high transition frequency of 100 MHz, making it suitable for high-frequency applications.

The dimensions of this model are 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height, allowing for compact PCB designs.

It is housed in a 6-pin SOT-363 surface-mount package, which is suitable for space-constrained designs.

Yes, the BC847BDW1T1G is automotive qualified with the AEC-Q101 standard, ensuring reliability and quality in automotive applications.

The maximum power dissipation for the BC847BDW1T1G is 380 mW, which is important for thermal management in circuits.

The maximum emitter-base voltage (VEBO) for this transistor is 6 V.

The maximum collector-base voltage (VCBO) rating for this model is 50 V.

The BC847BDW1T1G features an isolated transistor configuration, suitable for various electronic applications.

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