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Nexperia PNP Bipolar Transistor PBHV9040T,215 -250 mA, -400 V, 3-Pin SOT-23, Surface Mount

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model PBHV9040T,215
Width 1.4mm
Mount Type Surface
Series PBHV9040T
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -400V
Minimum DC Current Gain hFE 100
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -500V
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -250mA
Transistor Configuration Single
Maximum Transition Frequency ft 55MHz

Key Features

  • This transistor features a maximum power dissipation of 300 mW, suitable for low power applications.
  • It operates efficiently within the temperature range of -55°C to 150°C.
  • The device has a minimum DC current gain (hFE) of 100, ensuring reliable amplification.
  • The maximum transition frequency is 55 MHz for high-frequency operation.
  • Compact dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height enable integration into dense circuits.
  • Transistor polarity is PNP with single transistor configuration.
  • Maximum collector base voltage and emitter base voltage ratings are -500 V and -6 V respectively.
  • Designed according to the PBHV9040T series standards with surface mount technology.

Product Description

The Nexperia PBHV9040T,215 is a PNP bipolar transistor optimized for surface mount applications with a 3-pin SOT-23 package. It supports a maximum DC collector current of -250 mA and maximum collector emitter voltage of -400 V, making it suitable for various electronic circuits requiring moderate voltage and current handling capabilities.

This transistor has a maximum power dissipation rating of 300 mW and boasts reliable performance across a wide temperature range from -55°C to 150°C, ensuring stability in both industrial and commercial environments.

The minimum DC current gain (hFE) is 100 and the maximum transition frequency is 55 MHz, supporting efficient switching and amplification in signal processing and control applications.

Its compact physical dimensions (3 mm length, 1.4 mm width, and 1.1 mm height) allow for space-efficient PCB design. The device features PNP polarity in a single transistor configuration.

Additional voltage ratings include a maximum collector base voltage of -500 V and a maximum emitter base voltage of -6 V, providing operational robustness.

This component is produced under the PBHV9040T series and is fully surface mount compatible in the popular SOT-23 outline, making it ideal for automated PCB assembly processes in industrial, automotive, and consumer electronics sectors.

Manufactured in China, the transistor is supplied on a reel, ready for insertion into automated machinery to enhance production efficiency. This transistor features a maximum power dissipation of 300 mW, suitable for low power applications.

It operates efficiently within the temperature range of -55°C to 150°C. The device has a minimum DC current gain (hFE) of 100, ensuring reliable amplification. The maximum transition frequency is 55 MHz for high-frequency operation.

Compact dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height enable integration into dense circuits. Transistor polarity is PNP with single transistor configuration. Maximum collector base voltage and emitter base voltage ratings are -500 V and -6 V respectively.

Designed according to the PBHV9040T series standards with surface mount technology. Manufactured in China and supplied in tape and reel packaging for automated assembly. Explore more Nexperia transistors and electronic components on EnvMart for your next industrial or commercial application.

Explore more products in our Bipolar Transistors category.

Nexperia PNP Bipolar Transistor PBHV9040T,215 -250 mA, -400 V, 3-Pin SOT-23, Surface Mount
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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) for this model is -400 V.

This transistor has a maximum power dissipation rating of 300 mW.

It operates efficiently within a temperature range of -55°C to 150°C.

The dimensions of this model are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

The minimum DC current gain (hFE) is 100.

The maximum transition frequency for this model is 55 MHz.

This model features a single transistor configuration with PNP polarity.

The maximum DC collector current (Idc) for this transistor is -250 mA.

It comes in a SOT-23 package type, suitable for surface mount applications.

The maximum emitter base voltage (VEBO) rating is -6 V.

This transistor is manufactured in China.

The maximum collector base voltage (VCBO) rating is -500 V.

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