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DiodesZetex Darlington Transistor NPN 1 A 160 V 5000 hFE 3-Pin E-Line ZTX601B

Category Darlington Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 4.01mm
Length 4.77mm
Model ZTX601B
Mount Type Through Hole
Series ZTX601B
Maximum Operating Temperature 200°C
Package Type E-Line
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Continuous Collector Current Ic 1A
Maximum Collector Emitter Voltage Vceo 160V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 5000
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Base Voltage VCBO 180V
Maximum Collector Cut-off Current 0.00001mA
Maximum Power Dissipation Pd 1W
DiodesZetex ZTX601B 1 Darlington Transistor NPN, 1 A 160 V HFE 5000, 3-Pin E-Line

Key Features

  • This transistor uses a 3-pin E-Line package, suitable for through-hole mounting.
  • It has a maximum power dissipation of 1 watt to handle moderate power applications.
  • The device operates reliably within a temperature range from -55°C to 200°C.
  • It has a maximum emitter base voltage of 10 V and a maximum collector base voltage of 180 V.
  • The transistor is a single element chip with an NPN polarity type.
  • Designed without any automotive standard certifications, it is ideal for general electronics and industrial purposes.

Product Description

DiodesZetex ZTX601B is a high-performance Darlington transistor designed for electronic and industrial applications that require high current gain and moderate voltage resistance. This NPN transistor supports a maximum continuous collector current of 1 amp and a maximum collector emitter voltage of 160 volts, making it suitable for switching and amplification tasks.

The transistor's robust 3-pin E-Line package is engineered for through-hole mounting, facilitating easy insertion into printed circuit boards and ensuring stable mechanical attachment. Its compact dimensions of 4.01 mm in height and 4.77 mm in length contribute to efficient PCB space utilization.

With a minimum DC current gain (hFE) of 5000, the ZTX601B provides excellent amplification capabilities. It supports a maximum power dissipation of 1 watt, which supports moderate power electronic circuits while maintaining thermal reliability.

The operational temperature range from -55°C to 200°C ensures dependable performance in varied environmental conditions typically encountered in industrial, commercial, and laboratory settings. The transistor features maximum voltages of 10 V for emitter-base and 180 V for collector-base, defining safe operational boundaries for circuit design engineers.

This transistor is ideal for use in power and signal amplification, switching in control circuits, and other applications requiring reliable bipolar transistor performance without automotive-specific certifications.

This product contains 1 Darlington transistor with NPN polarity in a 3-pin E-Line package. Maximum continuous collector current: 1 A. Maximum collector emitter voltage: 160 V. High DC current gain (hFE): minimum 5000. Maximum power dissipation: 1 W.

Operating temperature range: -55°C to 200°C. Compact package dimensions facilitate PCB design. Explore more Darlington Transistors and discrete semiconductors in the Electronics & Electricals category at EnvMart.

DiodesZetex Darlington Transistor NPN 1 A 160 V 5000 hFE 3-Pin E-Line ZTX601B
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Frequently Asked Questions

The ZTX601B supports a maximum continuous collector current of 1 amp.

It has a maximum collector-emitter voltage of 160 volts.

The minimum DC current gain (hFE) for the ZTX601B is 5000.

This model has a height of 4.01 mm and a length of 4.77 mm.

The maximum power dissipation for the ZTX601B is 1 watt.

It operates reliably within a temperature range from -55°C to 200°C.

This transistor uses a 3-pin E-Line package suitable for through-hole mounting.

The maximum emitter-base voltage (VEBO) is 10 volts.

This model is suitable for power and signal amplification, as well as switching in control circuits.

The maximum collector-base voltage (VCBO) is 180 volts.

The ZTX601B contains 1 element per chip.

The country of origin for this transistor is India.

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