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Nexperia P-Channel Enhancement MOSFET 20.2A 20V 8-Pin MLPAK33 Surface Mount PXP8R3-20QXJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXP8R3-20QXJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 20.2A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Utilizes trench MOSFET technology for low threshold voltage.
- Designed as a high-side load switch for power management applications.
- Supports battery management and DC-to-DC conversion circuits.
- Surface mount MLPAK33 (SOT8002) plastic package enables compact PCB designs.
- Maximum power dissipation rating of 81 W for robust performance.
- Wide operating temperature range from -55°C to 175°C.
- Maximum gate-source voltage of 20 V enhances switching control.
- Low drain-source resistance of 13.6 mΩ reduces conduction losses.
Product Description
The Nexperia PXP8R3-20QXJ model is a high-performance P-Channel enhancement mode MOSFET designed for surface mounting on PCBs. Featuring trench MOSFET technology in an 8-pin MLPAK33 package, it supports a maximum continuous drain current of 20.2 A and a drain-source voltage rating of 20 V, delivering efficient switching and power management capabilities.
This device boasts a low threshold voltage and low on-resistance of 13.6 mΩ, making it an ideal component for high-side load switch applications, battery management systems, DC-to-DC converters, and general purpose switching circuits. It can dissipate up to 81 W of power, ensuring reliability under demanding conditions.
The transistor functions reliably across a broad temperature range from -55°C up to 175°C, suited for industrial and electronic manufacturing environments. The maximum gate-source voltage is 20 V, enabling precise control of the MOSFET gate driving signals.
The MLPAK33 package (also known as SOT8002) offers a compact footprint for efficient PCB space utilization in electronic components design. This P-channel device is surface mountable, providing ease of assembly in automated production lines.
Utilizes trench MOSFET technology for enhanced electrical characteristics. Supports battery and power management applications efficiently. Suitable for DC-to-DC converters and switching circuits. High power dissipation capability ensures stable operation.
Wide operating temperature range suitable for harsh environments. Compact 8-pin MLPAK33 surface mount package. Low on-resistance for reduced energy loss. Designed for industrial and manufacturing electronic systems. Reliable electrical performance under high current loads.
Enables efficient high-side switching and voltage control. This component is ideal for engineers and designers in industrial electronics, power supply design, and manufacturing sectors looking for a reliable P-Channel MOSFET solution.
Explore more semiconductor and MOSFET products in EnvMart's comprehensive electronics component catalog to find compatible devices and complementary components for your projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20.2 A.
This MOSFET has a maximum drain-source voltage rating of 20 V.
The PXP8R3-20QXJ is packaged in an 8-pin MLPAK33 (SOT8002) surface mount package.
It operates within a temperature range of -55°C to 175°C.
The maximum power dissipation rating for this MOSFET is 81 W.
This model features a low drain-source resistance of 13.6 mΩ.
It is a P-Channel enhancement mode MOSFET designed for high-side load switching applications.
This model is suitable for battery management systems, DC-to-DC converters, and general-purpose switching circuits.
The maximum gate-source voltage for this model is 20 V.
The MLPAK33 package enables compact PCB designs, allowing for efficient space utilization in electronic components.
This MOSFET is manufactured in India.
Trench MOSFET technology allows for low threshold voltage and enhanced electrical characteristics, improving efficiency in power management applications.
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