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| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXP020-20QXJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 12.1A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Nexperia PXP020-20QXJ Type P-Channel MOSFET is a high-performance semiconductor component designed for power management and switching applications requiring up to 12.1A continuous drain current and a 20V maximum drain-source voltage. It features an enhancement mode channel implemented with advanced trench MOSFET technology that provides low threshold voltage and efficient current conduction.
The device comes in an 8-Pin MLPAK33 surface-mount package, ensuring a compact and robust form factor suitable for modern PCB integration. It supports a maximum gate-source voltage of 20V and a maximum power dissipation rating of 81W, making it ideal for use in high-side load switches, battery management systems, and DC-to-DC power converters. The MOSFET is rated for operation across a wide temperature range from -55°C to 175°C, offering versatility for industrial, commercial, automotive, and consumer electronics applications requiring reliable high current switching under harsh environmental conditions.
This component does not conform to any automotive standard and is RoHS compliant, ensuring it meets environmental safety regulations. Its low drain-source resistance of 13.6 milliohms reduces power losses and heating during operation, contributing to system efficiency and longevity.
Common use cases include industrial equipment control, power management modules, HVAC systems, manufacturing automation, and portable electronic devices. The surface mount packaging enables automated assembly and streamlined manufacturing processes.
This MOSFET utilizes trench MOSFET technology ensuring low threshold voltage. It has an enhancement channel mode suitable for high-side load switching. The maximum drain-source resistance is 13.6 milliohms enabling efficient operation.
The device supports a maximum gate-source voltage of 20V and power dissipation up to 81W. Operating temperature range spans from -55°C to 175°C for diverse applications. Designed for surface mount on PCBs making integration simple and compact.
The MOSFET is suitable for battery management, DC-to-DC conversion, and switching circuits. It includes 8 pins configured in a MLPAK33 package offering robust mechanical stability. The product is RoHS compliant and does not follow automotive standards.
Explore additional semiconductor and power management components in the Electronics & Electricals category at EnvMart for your diverse electronic design and manufacturing needs.
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