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Nexperia N-Channel Enhancement Mode MOSFET 14 A 30 V 8-Pin MLPAK33 PXN5R4-30QLJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXN5R4-30QLJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Features logic-level compatibility for low voltage operation.
- Employs advanced Trench MOSFET technology for improved efficiency.
- Packaged in a compact MLPAK33 surface-mount device with an 8-pin configuration.
- Ensures a maximum power dissipation of 12.5 W for reliable performance.
- Operates within a broad temperature range from -55°C to 150°C.
- Maximum gate-source voltage rating is 20 V for optimal control.
- Surface-mounted package allows for efficient PCB integration.
- Designed with a low maximum drain-source resistance of 13.6 mΩ for reduced losses.
Product Description
The Nexperia PXN5R4-30QLJ is a N-Channel Enhancement Mode MOSFET designed to deliver efficient switching and power management capabilities. This device features a maximum continuous drain current of 14 A and a maximum drain-source voltage of 30 V, suitable for various electronic applications requiring robust transistor performance.
Encased in a compact MLPAK33 (3.3 x 3.3 mm) surface-mounted plastic package, the PXN5R4-30QLJ utilizes advanced Trench MOSFET technology to minimize on-resistance and improve overall device efficiency. Its logic-level compatibility ensures it can operate effectively within low-voltage control systems.
The device supports a maximum power dissipation of 12.5 W and is rated to operate reliably from -55°C to 150°C, accommodating demanding industrial environments. With an 8-pin layout, it provides flexibility in circuit design and optimization.
Key features include a low maximum drain-source resistance of 13.6 mΩ, enhancing power efficiency, and a maximum gate-source voltage of 20 V for precise gate control. Logic-level compatible for low voltage operation. Advanced Trench MOSFET technology reduces conduction losses.
Compact MLPAK33 surface-mount package (3.3 x 3.3 mm footprint). Maximum continuous drain current of 14 A. Maximum drain-source voltage of 30 V. Maximum power dissipation of 12.5 W. Wide operating temperature range from -55°C to 150°C.
Maximum gate-source voltage of 20 V. 8-pin configuration for versatile PCB integration. This transistor is ideal for use in industrial, electronic, power management, and switching applications, including in semiconductor devices for power supplies and motor drivers.
Explore more in the MOSFET category to find compatible components and accessories suitable for your electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for the PXN5R4-30QLJ is 14 A.
This model has a maximum drain-source voltage rating of 30 V.
The maximum power dissipation for the PXN5R4-30QLJ is 12.5 W.
It operates reliably within a temperature range from -55°C to 150°C.
The maximum gate-source voltage rating is 20 V.
This device is packaged in a compact MLPAK33 surface-mount package.
The PXN5R4-30QLJ has an 8-pin configuration.
The maximum drain-source resistance is 13.6 mΩ.
Yes, it features logic-level compatibility for low voltage operation.
This model uses an N-channel enhancement mode.
It is suitable for industrial, electronic, power management, and switching applications.
The country of origin for this device is India.
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