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ROHM Digital Transistor Dual NPN + NPN 50 V Surface Mount SOT-563 6-Pin EMH53T2R

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ROHM Digital Transistor Dual NPN + NPN 50 V Surface Mount SOT-563 6-Pin EMH53T2R

Name: ROHM Digital Transistor Dual NPN + NPN 50 V Surface Mount SOT-563 6-Pin EMH53T2R
Brand: ROHM
SKU: 309110
Price: 1746 INR
Availability: InStock

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Category Bipolar Transistors Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	0.55mm
Length	1.7mm
Model	EMH53T2R
Width	1.7mm
Mount Type	Surface
Series	EMH53
Maximum Operating Temperature	150°C
Package Type	SOT-563
Pin Count	6
Maximum Collector Emitter Voltage Vceo	50V
Minimum DC Current Gain hFE	100
Transistor Polarity	NPN + NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	50V
Maximum Power Dissipation Pd	150mW
Transistor Configuration	Dual

Key Features

The transistor configuration is dual, with independent elements for efficient interface elimination.
Maximum collector emitter voltage (Vceo) is 50 V, suitable for moderate voltage applications.
The device supports a maximum collector base voltage of 50 V and a maximum emitter base voltage of 5 V.
Maximum power dissipation is 150 mW with a maximum operating temperature of 150°C.
The device features a minimum DC current gain (hFE) of 100 for reliable switching performance.
The compact SOT-563 package measures 1.7 mm length, 1.7 mm width, and 0.55 mm height.
This surface mount transistor is ideal for space-saving industrial and electronics applications.

Product Description

ROHM EMH53T2R digital transistor is a high-performance dual NPN + NPN bipolar transistor housed in a compact SOT-563 surface mount package with 6 pins. It is engineered for applications requiring a maximum collector emitter voltage (Vceo) of 50 V and supports a maximum power dissipation of 150 mW. The transistor configuration comprises two independent transistor elements, facilitating the elimination of interface complexity and reducing mounting cost and footprint.

This device supports a maximum collector base voltage (VCBO) of 50 V and a maximum emitter base voltage (VEBO) of 5 V, making it suitable for a range of mid-voltage switching applications in industrial, communications, and instrumentation circuits. It delivers a minimum DC current gain (hFE) of 100, ensuring stable and predictable transistor operation.

The package dimensions are 1.7 mm by 1.7 mm with a height of 0.55 mm, making it ideal for compact PCB designs where space efficiency is critical. The operating temperature range extends up to 150°C, supporting robust performance in demanding environments.

This transistor is surface mount compatible, allowing automated assembly processes for scalable manufacturing. The ROHM EMH53T2R is a reliable component for designers seeking efficient, dual NPN transistor solutions in a small form factor.

The transistor configuration is dual, with two independent transistor elements for interface elimination. Maximum collector emitter voltage of 50 V ensures suitability for moderate voltage circuits. Power dissipation rating of 150 mW supports medium power operation.

Minimum DC current gain of 100 enables stable switching characteristics. Compact SOT-563 package dimensions optimize PCB space utilization. Maximum operating temperature of 150°C supports demanding industrial environments.

Surface mount design facilitates high-volume, automated PCB assembly.

This product is ideal for use in industrial electronics, power management, communications equipment, and other commercial applications requiring dependable transistor performance. Explore more ROHM Bipolar Transistors and related components in our semiconductor category at EnvMart.

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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) for this model is 50 V, making it suitable for moderate voltage applications.

This model is housed in a SOT-563 package, with dimensions of 1.7 mm in length, 1.7 mm in width, and 0.55 mm in height.

The maximum power dissipation for this dual NPN transistor is 150 mW.

It features a minimum DC current gain (hFE) of 100, ensuring stable and predictable operation.

The maximum operating temperature for this transistor is 150°C, allowing it to perform in demanding environments.

The maximum collector base voltage (VCBO) is 50 V and the maximum emitter base voltage (VEBO) is 5 V.

This model has a dual configuration with two independent NPN elements, which helps in eliminating interface complexity.

Yes, the EMH53T2R is designed for surface mount applications, facilitating automated assembly processes.

This transistor has a pin count of 6, suitable for compact PCB designs.

This model is suitable for industrial electronics, power management, communications equipment, and other commercial applications requiring reliable performance.

The country of origin for this transistor is India.