Nexperia Dual Trench P-Channel Enhancement Mode MOSFET 8-Pin DFN, 500 mA, -20 V, Surface Mount PMDXB950UPELZ

Nexperia PMDXB950UPELZ is a high-efficiency dual trench P-channel enhancement mode MOSFET tailored for surface mount device (SMD) applications. Housed in a leadless ultra-small DFN1010B-6 (SOT1216) plastic package, it combines compactness with robust electrical performance.

This MOSFET supports a maximum continuous drain current of 500 mA and a maximum drain-source voltage of -20 V, making it suitable for low voltage power management tasks. Its trench technology enables low leakage currents and high reliability, ensuring efficient power handling in demanding industrial and commercial electronic circuits.

The device features a low on-resistance of 1.02 Ω, reducing power dissipation and enhancing overall energy efficiency. It is rated for operation across a wide temperature range from -55°C to +150°C, allowing for application in environments with extreme temperature conditions.

Designed with an exposed drain pad, the MOSFET achieves excellent thermal conduction, thereby supporting higher power dissipation (4025 mW). Enhanced electrostatic discharge (ESD) protection above 1 kV HBM safeguards the device against static damage during handling and operation.

Nexperia PMDXB950UPELZ is best suited for applications such as relay driving, high-speed line driving, high-side load switching, and various switching circuit implementations in industrial automation, consumer electronics, and communication devices.

Dual P-channel trench MOSFET with enhancement mode operation. Maximum continuous drain current of 500 mA for efficient load handling. Maximum drain-source voltage rating of -20 V suitable for low voltage circuits. Comes in an 8-pin DFN surface mount package, ultra small and thin.

Low drain-source on-resistance of 1.02 Ω for minimal power loss. Built with trench technology for low leakage current and enhanced performance. Operating temperature range from -55°C to +150°C ensuring durability in harsh environments.

Exposed drain pad for improved thermal conduction and heat dissipation. ESD protection greater than 1 kV HBM for device robustness. Ideal for relay drivers, high-speed line drivers, and switching circuits. Explore EnvMart's extensive catalog of semiconductor components to find compatible devices and complementary products to optimize your design and manufacturing processes.