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ROHM N-Channel MOSFET 100 mA 20 V Enhancement, 3-Pin SC-75 RE1C001UNTCL

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ROHM N-Channel MOSFET 100 mA 20 V Enhancement, 3-Pin SC-75 RE1C001UNTCL

Name: ROHM N-Channel MOSFET 100 mA 20 V Enhancement, 3-Pin SC-75 RE1C001UNTCL
Brand: ROHM
SKU: 301116
Price: 0.07 USD
Availability: InStock

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Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	800μm
Length	1.7mm
Model	RE1C001UNTCL
Width	960μm
Mount Type	Surface
Series	RE1C001UN
Maximum Operating Temperature	150°C
Package Type	SC-75
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	100mA
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	3.5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	150mW
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	1.2V

Key Features

This MOSFET features an enhancement type channel mode for efficient switching.
It comes in a compact 3-pin SC-75 package suitable for surface mounting.
The device has a maximum power dissipation of 150 mW ensuring reliable thermal performance.
Operational temperature ranges from -55°C to 150°C for wide application versatility.
Maximum gate-source voltage tolerance is ±8 V, providing robust control.
The component exhibits low forward voltage of 1.2 V for efficient conduction.
The drain-source resistance is limited to 3.5 Ω for low power loss.
Physical dimensions include length 1.7 mm, width 960 μm, and height 800 μm.

Product Description

ROHM RE1C001UNTCL is a high-quality N-Channel MOSFET designed for efficient switching and amplification in electronic circuits. With a maximum continuous drain current of 100 mA and a drain-source voltage rating of 20 V, this device suits low-power applications requiring compact and reliable components.

The device features an enhancement channel mode and is housed in a 3-pin SC-75 surface mount package, providing a small footprint ideal for modern PCB designs in consumer electronics, communications, and industrial equipment. Its maximum power dissipation of 150 mW supports moderate thermal loads during operation.

Operating temperature ranges from an extreme low of -55°C up to 150°C, making the MOSFET suitable for demanding environment conditions. The gate-source voltage tolerance of ±8 V offers stable and precise gating control, while its maximum drain-source resistance of 3.5 Ω ensures minimal conduction losses.

Compact physical dimensions of approximately 1.7 mm length, 960 μm width, and 800 μm height facilitate dense component placement. The low forward voltage of 1.2 V enhances power efficiency further.

This MOSFET is RoHS compliant, confirming adherence to environmental protection and safety regulations, making it suitable for industrial, automotive (non-automotive rated), laboratory, and manufacturing applications.

This ROHM MOSFET enhances circuit switching performance. Its compact SC-75 package allows surface mounting on varied PCB layouts. The device’s power rating supports usage in moderate power electronics. Wide temperature operating range suits harsh climate conditions.

Applicable for industrial, electronics manufacturing, and consumer electronics sectors. Explore more ROHM semiconductor products and high-quality MOSFETs at EnvMart to meet diverse electronics design and production needs.