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ROHM N-Channel MOSFET 21 A 650 V Enhancement 3-Pin TO-247N SCT3120ALGC11

Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 21mm
Length 16mm
Model SCT3120ALGC11
Width 5mm
Mount Type Through Hole
Maximum Operating Temperature 175°C
Package Type TO-247N
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 21A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 158.4mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 103W
Typical Gate Charge Qg @ Vgs 38nC
Maximum Gate Source Voltage Vgs 22V
Forward Voltage Vf 3.2V

Key Features

  • Maximum continuous drain current of 21 amperes ensures efficient high current handling.
  • High maximum drain-source voltage of 650 volts for robust operation under high voltage conditions.
  • Fast switching speed with low on-resistance enables energy efficient performance.
  • Compact TO-247N package type suitable for through-hole mounting and easy integration.
  • Maximum power dissipation of 103 watts supports high power applications without overheating.
  • Operating temperature range from -55°C to 175°C ensures reliability in harsh environments.
  • Typical gate charge of 38 nanocoulombs allows for fast gate switching control.
  • Forward voltage drop of 3.2 volts contributes to efficient conduction.

Product Description

ROHM SCT3120ALGC11 is a high quality N-Channel MOSFET designed with enhancement mode for efficient switching in power electronics. This device is housed in a durable TO-247N 3-pin through-hole package, measuring 16mm in length, 5mm in width, and 21mm in height.

The MOSFET supports a maximum continuous drain current of 21 amperes and can withstand a maximum drain-source voltage of 650 volts. It offers a low drain-source resistance of 158.4 milliohms which contributes to low conduction losses and fast switching capabilities with a gate charge of 38 nanocoulombs.

The device can dissipate up to 103 watts, allowing it to handle significant power loads in industrial, electronic, and power management applications. It is rated for operation in extreme temperature environments ranging from -55°C to 175°C. The maximum gate-source voltage is rated at 22 volts, ensuring device safety under varying gate drive conditions.

Applications for this MOSFET span industrial power supplies, motor control circuits, automotive electronics, and other electronic components requiring fast, reliable switching and high current capacity.

Maximum continuous drain current of 21 amperes ensures efficient high current handling. High maximum drain-source voltage of 650 volts for robust operation under high voltage conditions. Fast switching speed with low on-resistance enables energy efficient performance.

Compact TO-247N package suitable for through-hole mounting and easy integration. Maximum power dissipation of 103 watts supports high power applications without overheating. Operating temperature range from -55°C to 175°C ensures reliability in harsh environments.

Typical gate charge of 38 nanocoulombs allows for fast gate switching control. Forward voltage drop of 3.2 volts contributes to efficient conduction. Lead plating is Pb-free, RoHS compliant, and environmentally friendly.

This product is a trusted semiconductor component in the electronics industry, particularly for designing efficient power circuits in industrial, manufacturing, and automotive sectors. For further exploration of similar MOSFETs and semiconductor devices, browse EnvMart's comprehensive MOSFET category.

ROHM N-Channel MOSFET 21 A 650 V Enhancement 3-Pin TO-247N SCT3120ALGC11
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Frequently Asked Questions

The maximum continuous drain current for this model is 21 amperes, allowing for efficient high current handling in various applications.

This MOSFET can withstand a maximum drain-source voltage of 650 volts, making it suitable for robust operation under high voltage conditions.

It is housed in a TO-247N package type, which is designed for through-hole mounting and easy integration into circuits.

The operating temperature range for this model is from -55°C to 175°C, ensuring reliability in harsh environments.

It has a maximum power dissipation capability of 103 watts, supporting high power applications without overheating.

The typical gate charge for this model is 38 nanocoulombs, which allows for fast gate switching control.

The forward voltage drop for this device is 3.2 volts, contributing to efficient conduction during operation.

The maximum gate-source voltage for this MOSFET is rated at 22 volts, ensuring device safety under varying gate drive conditions.

The dimensions of the TO-247N package are 16mm in length, 5mm in width, and 21mm in height.

This MOSFET features a low drain-source resistance of 158.4 milliohms, which helps reduce conduction losses and enhances switching capabilities.

This MOSFET is suitable for applications including industrial power supplies, motor control circuits, and automotive electronics requiring fast and reliable switching.

This model uses an N-channel configuration, designed for enhancement mode operation in power electronics.

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