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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 21mm |
| Length | 16mm |
| Model | SCT3120ALGC11 |
| Width | 5mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247N |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 21A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 158.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 103W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | 22V |
| Forward Voltage Vf | 3.2V |
ROHM SCT3120ALGC11 is a high quality N-Channel MOSFET designed with enhancement mode for efficient switching in power electronics. This device is housed in a durable TO-247N 3-pin through-hole package, measuring 16mm in length, 5mm in width, and 21mm in height.
The MOSFET supports a maximum continuous drain current of 21 amperes and can withstand a maximum drain-source voltage of 650 volts. It offers a low drain-source resistance of 158.4 milliohms which contributes to low conduction losses and fast switching capabilities with a gate charge of 38 nanocoulombs.
The device can dissipate up to 103 watts, allowing it to handle significant power loads in industrial, electronic, and power management applications. It is rated for operation in extreme temperature environments ranging from -55°C to 175°C. The maximum gate-source voltage is rated at 22 volts, ensuring device safety under varying gate drive conditions.
Applications for this MOSFET span industrial power supplies, motor control circuits, automotive electronics, and other electronic components requiring fast, reliable switching and high current capacity.
Maximum continuous drain current of 21 amperes ensures efficient high current handling. High maximum drain-source voltage of 650 volts for robust operation under high voltage conditions. Fast switching speed with low on-resistance enables energy efficient performance.
Compact TO-247N package suitable for through-hole mounting and easy integration. Maximum power dissipation of 103 watts supports high power applications without overheating. Operating temperature range from -55°C to 175°C ensures reliability in harsh environments.
Typical gate charge of 38 nanocoulombs allows for fast gate switching control. Forward voltage drop of 3.2 volts contributes to efficient conduction. Lead plating is Pb-free, RoHS compliant, and environmentally friendly.
This product is a trusted semiconductor component in the electronics industry, particularly for designing efficient power circuits in industrial, manufacturing, and automotive sectors. For further exploration of similar MOSFETs and semiconductor devices, browse EnvMart's comprehensive MOSFET category.
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