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Vishay 100 V 6 A Surface Mount Schottky Barrier Rectifier TO-252 Package V6PW10HM3/I

Category Schottky Barrier Rectifier Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Model V6PW10HM3/I
Mount Type Surface
Series eSMP
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -40°C
Standards/Approvals RoHS
Automotive Standard AEC-Q101
Maximum Continuous Forward Current If 6A
Peak Reverse Repetitive Voltage Vrrm 100V
Diode Configuration Single
Rectifier Type Schottky
Peak Non-Repetitive Forward Surge Current Ifsm 100A
Maximum Forward Voltage Vf 0.58V

Key Features

  • Utilizes trench MOS barrier Schottky technology for low forward voltage drop.
  • Comes in a TO-252 package ideal for automated PCB placement.
  • Offers high efficiency with low power losses and a maximum forward voltage of 0.58 V.
  • Operation range from -40°C to 175°C making it suitable for automotive applications.
  • Supports peak non-repetitive forward surge current of 100 A.
  • Meets RoHS and AEC-Q101 automotive standards ensuring quality and reliability.
  • Designed for use in DC/DC converters, freewheeling diodes, and polarity protection circuits.

Product Description

Vishay V6PW10HM3/I Schottky Barrier Rectifier is a high current density surface-mount rectifier specifically engineered to provide excellent efficiency and low power loss in electronic circuits. It features trench MOS barrier Schottky technology that delivers a low forward voltage drop while maintaining reliable operation up to 175°C.

This rectifier uses a TO-252 package, which is a compact surface-mount type enabling automated placement in high volume manufacturing processes. It is ideal for low voltage, high frequency DC/DC converters, freewheeling diode tasks, and polarity protection in industrial and automotive electronic systems.

The maximum continuous forward current rating of 6 A and a peak reverse repetitive voltage of 100 V make it suitable for a wide variety of applications requiring efficient switching and rectification performance. Additionally, it supports a peak non-repetitive forward surge current of 100 A, enhancing robustness during transient conditions.

The device complies with the RoHS directive for hazardous substance restrictions and meets the stringent automotive industry standard AEC-Q101, guaranteeing high reliability and quality for automotive and industrial use cases.

Typical applications include power management in DC/DC converters, automotive electronics, telecommunications, and industrial control systems benefiting from high efficiency and low thermal dissipation.

Low profile design with a height of approximately 1.3 mm. Trench MOS Schottky technology ensuring minimal forward voltage drop and power dissipation. RoHS compliant and automotive qualified to AEC-Q101. This rectifier is a reliable choice for engineers seeking durable, efficient semiconductor solutions in industrial, automotive, and commercial electronics environments.

Browse more semiconductor and Schottky diode products at EnvMart for comprehensive hardware solutions.

Vishay 100 V 6 A Surface Mount Schottky Barrier Rectifier TO-252 Package V6PW10HM3/I
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Frequently Asked Questions

The maximum continuous forward current rating of this rectifier is 6 A.

The peak reverse repetitive voltage for this model is 100 V.

It operates within a temperature range of -40°C to 175°C.

This rectifier comes in a TO-252 package, which is suitable for surface mounting.

The maximum forward voltage drop is 0.58 V.

It meets the AEC-Q101 automotive standard, ensuring reliability for automotive applications.

The rectifier supports a peak non-repetitive forward surge current of 100 A.

Typical applications include DC/DC converters, freewheeling diodes, and polarity protection circuits.

It utilizes trench MOS barrier Schottky technology for low forward voltage drop and high efficiency.

The height of the TO-252 package is approximately 1.3 mm.

Yes, it is RoHS compliant, adhering to hazardous substance restrictions.

This rectifier features a single diode configuration.

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