Nexperia N-Channel MOSFET, 10.3 A Continuous Drain Current, 30 V Drain Source Voltage, 4-Pin LFPAK88 Surface PSMNR55-40SSHJ

The Nexperia PSMNR55-40SSHJ is a high-performance N-channel enhancement mode MOSFET packaged in a LFPAK88 surface mount format. This device is engineered to provide a continuous drain current of 10.3 A with a maximum drain-source voltage rating of 30 V, making it suitable for a wide range of high-efficiency power switching applications.

Leveraging Nexperia's unique Schottky Plus technology, the MOSFET delivers very low spiking performance generally found in MOSFETs integrated with Schottky or Schottky-like diodes but without the drawback of high leakage current. The physical design includes a copper clip and solder die attach which help minimize package inductance and resistance, contributing to its high current handling capability.

This device is avalanche rated and 100% tested to guarantee dependable operation, even under rigorous conditions. The MOSFET supports a maximum power dissipation of 81 W and operates efficiently over a broad temperature range from -55°C to 175°C.

Its low gate charge and soft body-diode recovery characteristics enable superfast switching with reduced electromagnetic interference (EMI) and spiking - qualities that make it an excellent choice for applications demanding high switching frequencies and low noise emissions.

PSMNR55-40SSHJ is an ideal replacement for D2PAK and 10x12 mm leadless package types, and it complies with UL2595 requirements for creepage and clearance, enhancing safety and reliability in industrial environments.

Typical applications for this MOSFET include brushless DC motor control, synchronous rectifiers in high-power AC-to-DC converters such as server power supplies, battery protection and management systems (BMS), eFuse circuits, and in-rush current management systems.

Employs Schottky Plus technology for high efficiency and low spiking performance. Copper-clip and solder die attach reduce package inductance and resistance. Avalanche rated and 100% tested for reliability. Supports a maximum power dissipation of 81 W for high power applications.

Operates reliably in temperature ranges from -55°C to 175°C. Features low gate charge (QG) for improved switching efficiency. Soft body-diode recovery reduces EMI and spiking during switching. Ideal replacement for D2PAK and 10x12 mm leadless package types.

Meets UL2595 requirements for creepage and clearance ensuring safety. Applications include brushless DC motor control, synchronous rectification in power supplies, battery management systems, eFuse, and in-rush current management.

This product is well suited for industrial, electronics manufacturing, telecommunications, automotive power electronics, and other commercial engineering applications requiring reliable, efficient power MOSFETs.

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