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Nexperia Gallium Nitride MOSFET, 10.3 A Continuous Drain Current, 30 V Drain-Source Voltage, TO-247 Package GAN041-650WSBQ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | GAN041-650WSBQ |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- The device features ultra-low reverse recovery charge for improved efficiency.
- It supports simple gate drive voltages from 0 V to +10 or +12 V.
- Robust gate oxide allows ±20 V gate-source voltage for reliability.
- High gate threshold voltage of +4 V enhances gate bounce immunity.
- Operates effectively in hard and soft switching converters for industrial and data communication power applications.
- Offers transient over-voltage capability suitable for bridgeless totempole PFC, PV, and UPS inverters.
- Allows very low source-drain voltage during reverse conduction mode.
- Can be applied in servo motor drives and various power electronic conversions.
Product Description
Nexperia GAN041-650WSBQ is a high-performance Gallium Nitride MOSFET designed for power electronic applications. This device in a TO-247 package supports a continuous drain current of 10.3 A and a maximum drain-source voltage of 30 V, making it suitable for demanding industrial and data communication power circuits.
The MOSFET features ultra-low reverse recovery charge which improves efficiency and reduces losses in switching applications. A simple gate drive voltage range from 0 V to +10 or +12 V simplifies circuit design while the robust gate oxide with ±20 V capability ensures reliable operation under varying conditions.
Its high gate threshold voltage of +4 V provides excellent gate bounce immunity, enhancing device stability during switching. The device exhibits very low source-drain voltage in reverse conduction mode, making it ideal for bridgeless totempole power factor correction, photovoltaic systems, and UPS inverter designs.
With a maximum power dissipation of 81 W and operational temperature range from -55°C to 175°C, the GAN041-650WSBQ supports robust performance in harsh environments. Its through-hole mount TO-247 package facilitates easy integration into power modules and systems.
Common applications include hard and soft switching converters, industrial power supply designs, servo motor drives, and other modern power electronics requiring efficient gallium nitride switching devices.
Ultra-low reverse recovery charge for high efficiency. Simple gate drive requirements with 0 V to +10/12 V operation. Robust gate oxide with ±20 V rating for reliability. High gate threshold voltage enhances noise immunity.
Suitable for bridgeless totempole PFC, PV, and UPS inverters. Through-hole mounting in TO-247 package for easy assembly. Wide operating temperature range from -55°C to 175°C. Maximum power dissipation of 81 W supports high power usage.
Low source-drain voltage during reverse conduction improves performance. Ideal for industrial and datacom power conversion applications. Explore more high-quality semiconductor components like the GAN041-650WSBQ MOSFET at EnvMart for your advanced electronics design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for the GAN041-650WSBQ is 10.3 A.
This MOSFET has a maximum drain-source voltage of 30 V.
The maximum power dissipation for this model is 81 W.
It operates effectively within a temperature range of -55°C to 175°C.
The device supports a simple gate drive voltage range from 0 V to +10 or +12 V.
This model is packaged in a TO-247 package, which allows for through-hole mounting.
The maximum gate-source voltage for the GAN041-650WSBQ is ±20 V.
The maximum drain-source resistance for this model is 13.6 mΩ.
This MOSFET is suitable for hard and soft switching converters, industrial power supply designs, and servo motor drives.
The robust gate oxide with ±20 V capability and high gate threshold voltage of +4 V enhance its reliability and gate bounce immunity.
Yes, it is suitable for bridgeless totempole power factor correction applications, as well as photovoltaic systems and UPS inverters.
It supports through-hole mounting, facilitating easy integration into power modules and systems.
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