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ROHM Insulated Gate Bipolar Transistor IGBT 40 A 650 V 3-Pin TO-247GE Through Hole RGTH80TS65DGC13
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGTH80TS65DGC13 |
| Mount Type | Through Hole |
| Series | RGTH80TS65DGC13 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247GE |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V |
| Maximum Power Dissipation Pd | 234W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- Features a low collector emitter saturation voltage of 1.6 V for efficient conduction.
- High speed switching capabilities reduce switching losses and improve performance.
- Built-in very fast and soft recovery freewheeling diode enhances switching softness.
- Wide operating temperature range from -40°C to 175°C ensures reliability in harsh environments.
- Compliance with RoHS directives, incorporating Pb-free lead plating.
- Designed for industrial applications requiring durable power semiconductors.
- Convenient 3-pin configuration suited for discrete electronic circuits.
- Through-hole mounting facilitates mechanical stability on standard PCBs.
Product Description
ROHM RGTH80TS65DGC13 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for power electronic circuits requiring efficient switching and conduction. It supports a maximum continuous collector current of 40 A and a maximum collector emitter voltage of 650 V. Packaged in a 3-Pin TO-247GE through-hole format, it provides ease of mounting and robust mechanical support for industrial applications.
This IGBT features a low collector emitter saturation voltage of 1.6 V which contributes to reduced conduction losses and improved energy efficiency. The device also incorporates a very fast and soft recovery freewheeling diode (FRD), enabling low switching losses and soft switching characteristics, which is essential for high-speed switching environments.
ROHM’s RGTH80TS65DGC13 operates reliably over a broad temperature range from -40°C to 175°C, making it suitable for demanding industrial, automotive (non-automotive standard), and power management applications where high thermal and electrical stress are present. The product is Pb-free and RoHS compliant, reflecting environmental considerations in manufacturing.
This component is primarily used in power electronics circuits such as motor drives, inverters, switching power supplies, and other semiconductor circuits requiring durable, efficient, and reliable IGBTs. The through-hole mounting type and 3-pin configuration allow for straightforward integration on printed circuit boards (PCBs) with standard assembly techniques.
Low saturation voltage ensures high conduction efficiency and energy savings. High-speed switching reduces losses and enhances device lifetime. Wide operating temperature range supports varied environmental conditions. Compliant with RoHS and environmentally conscious manufacturing standards.
Soft recovery diode reduces electromagnetic interference (EMI) and enhances switching performance. 3-pin TO-247GE package suitable for discrete power applications. Ideal for industrial automation, power supplies, and motor control circuits.
Explore EnvMart’s extensive semiconductor catalog for more ROHM IGBTs and other power components engineered for reliability and performance in industrial and commercial electronics.
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Frequently Asked Questions
The maximum continuous collector current for the RGTH80TS65DGC13 is 40 A.
This IGBT has a maximum collector emitter voltage of 650 V.
The collector emitter saturation voltage for this device is 1.6 V.
It operates reliably within a temperature range of -40°C to 175°C.
This model features a through-hole mounting type, specifically in a 3-pin TO-247GE package.
The maximum power dissipation for the RGTH80TS65DGC13 is 234 W.
The maximum gate emitter voltage for this IGBT is ±30 V.
Yes, it is RoHS compliant, reflecting its adherence to environmental manufacturing standards.
This IGBT is designed for power electronics circuits such as motor drives, inverters, and switching power supplies.
The built-in very fast and soft recovery freewheeling diode enhances switching softness and reduces switching losses.
The RGTH80TS65DGC13 has a 3-pin configuration.
This IGBT is manufactured by ROHM.
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