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Nexperia N-Channel Enhancement MOSFET 15 A, 30 V, 13.6 mΩ Rds, 12.5 W Pd, 8-Pin MLPAK33 PXN4R7-30QLJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXN4R7-30QLJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 15A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- This MOSFET features a low maximum drain source resistance of 13.6 milliohms for efficient conduction.
- The device is in an 8-pin MLPAK33 surface-mount package with a compact 3.3 x 3.3 mm footprint.
- It supports a maximum power dissipation of 12.5 watts, suitable for moderate power applications.
- Operating temperature ranges from -55°C to 150°C ensuring durability under varied conditions.
- Maximum gate source voltage rating is 20 volts, supporting logic level operation.
- Utilizes trench MOSFET technology for enhanced performance and efficiency.
- It is compatible with surface mount technology for modern PCB assembly.
- Designed primarily for use in electronic components and power management circuits.
Product Description
The Nexperia PXN4R7-30QLJ is an N-Channel enhancement mode MOSFET engineered using trench MOSFET technology. Packaged in an MLPAK33 (SOT8002) surface-mounted device, it features an 8-pin design with a small footprint of 3.3 x 3.3 mm, making it suitable for compact circuit layouts.
This MOSFET has a maximum continuous drain current rating of 15 amperes and a maximum drain source voltage of 30 volts. Its maximum drain source on-resistance is a low 13.6 milliohms, promoting high efficiency and minimal power loss in switching applications. The device dissipates up to 12.5 watts, supporting moderate power loads.
Its wide operating temperature range from -55°C to 150°C ensures reliable operation in harsh industrial and commercial environments. The maximum gate source voltage of 20 volts enables logic-level driving, making it compatible with a broad range of controllers and circuits.
This product is designed primarily for use in electronic components and power circuits that require efficient switching and amplification. Applications include power management, automotive electronics, industrial automation, and consumer electronics.
Low on-resistance enables energy-efficient operation. Compact surface-mount package saves PCB space. Wide temperature range ensures reliability in demanding conditions. Compatible with logic-level gate drive voltages. Ideal for various power electronic applications.
Choosing PXN4R7-30QLJ ensures cutting-edge trench MOSFET technology wrapped in a form factor optimized for modern electronics design. Explore a wide range of power and control semiconductors in the EnvMart catalog for electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 15 amperes.
The maximum drain source voltage rating is 30 volts.
It features a maximum drain source on-resistance of 13.6 milliohms.
This model supports a maximum power dissipation of 12.5 watts.
The operating temperature range is from -55°C to 150°C.
It is packaged in an 8-pin MLPAK33 surface-mount package.
The maximum gate source voltage rating is 20 volts.
Yes, it supports logic-level operation due to its maximum gate source voltage rating.
The footprint size of the MLPAK33 package is 3.3 x 3.3 mm.
This model features an N-channel enhancement mode.
It is designed primarily for use in power management circuits and electronic components.
The country of origin for this model is India.
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