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onsemi Small Signal NPN Bipolar Transistor 600 mA, 160 V, TO-92 Package 2N5551BU

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onsemi Small Signal NPN Bipolar Transistor 600 mA, 160 V, TO-92 Package 2N5551BU

Name: onsemi Small Signal NPN Bipolar Transistor 600 mA, 160 V, TO-92 Package 2N5551BU
Brand: onsemi
SKU: 287486
Price: 0.08 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	20.95mm
Length	5.2mm
Model	2N5551BU
Width	4.19mm
Mount Type	Through Hole
Series	2N5551
Maximum Operating Temperature	150°C
Package Type	TO-92
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	160V
Minimum DC Current Gain hFE	80
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	180V
Maximum Power Dissipation Pd	625mW
Maximum DC Collector Current Idc	600mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

High maximum DC collector current of 600 mA for moderate power applications.
Collector-emitter voltage rating of 160 V suitable for a wide range of electronic circuits.
Through-hole mount type with a compact TO-92 package design.
Minimum DC current gain (hFE) of 80 ensures effective amplification.
Maximum power dissipation of 625 mW supports reliable thermal performance.
Wide operating temperature range from -55°C to 150°C for versatile environmental conditions.
Maximum transition frequency of 100 MHz for high-speed switching applications.
Designed as a single NPN transistor configuration for general purpose use.

Product Description

onsemi 2N5551BU is a small signal NPN bipolar junction transistor designed for various general purpose and amplification applications in electronics. It features a maximum collector current of 600 mA and a maximum collector-emitter voltage of 160 V, making it suitable for medium power circuits requiring reliable transistor performance.

The transistor is housed in a compact TO-92 through-hole package, which is widely used in PCB assembly for durable mechanical mounting and optimal thermal dissipation. Its minimum DC current gain (hFE) of 80 supports solid signal amplification across a broad range of frequencies.

Operating reliably across temperature extremes from -55°C to 150°C, the 2N5551BU is fit for industrial, laboratory, and general electronics applications, including switching, amplification, and signal processing tasks in power supplies, audio equipment, and control circuits.

With a maximum power dissipation of 625 mW and a transition frequency up to 100 MHz, it handles moderate frequency switching and amplification workloads efficiently, delivering dependable performance and longevity.

The transistor's dimensions are approximately 20.95 mm in height, 5.2 mm in length, and 4.19 mm in width, facilitating integration in compact circuit designs. High maximum DC collector current of 600 mA for diverse applications.

Robust collector-emitter voltage capability of 160 V. Compact TO-92 through hole package for ease of assembly. Sufficient DC current gain (hFE) of 80 ensures performance. Wide operating temperature range from -55°C to 150°C.

Maximum power dissipation rating of 625 mW for thermal safety. Transition frequency of 100 MHz for high-speed circuit operation. 3-pin single transistor configuration. Compact dimensions allow use in space-sensitive electronics.

Ideal for industrial, laboratory, construction, and commercial electronics use cases. It is widely used in power connectors, semiconductor, and electronic components categories. Explore more onsemi transistors and related electronic components in EnvMart's Electronics & Electricals catalog for your electronic design and manufacturing needs.

Explore more products in our Bipolar Transistors category.