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Nexperia PNP Transistor, Maximum DC Collector Current -100 mA, Max Collector Emitter Voltage -65 V, 3-Pin BC856BQC-QZ

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model BC856BQC-QZ
Mount Type Surface
Series BC856xQC-Q
Maximum Operating Temperature 150°C
Package Type DFN1412D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -65V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -80V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc -100mA
Transistor Configuration PNP

Key Features

  • Compact DFN1412D-3 surface mount package with side-wettable flanks.
  • Maximum DC collector current of -100 mA supports moderate loads.
  • Collector-emitter voltage rated at -65 V with collector base voltage of -80 V.
  • Minimum DC current gain (hFE) of 220 for effective amplification.
  • Operating temperature range from -55°C to 150°C for automotive use.
  • Qualified according to AEC-Q101 automotive standard and RoHS compliant.
  • High power dissipation capability for reliable switching.
  • Low package height of 0.5 mm for space-restricted applications.

Product Description

Nexperia BC856BQC-QZ is a PNP transistor designed for general-purpose switching and amplification in electronic circuits. It is housed in an ultra-small 3-Pin DFN1412D-3 (SOT8009) leadless surface mount plastic package featuring side-wettable flanks for enhanced solder joint reliability.

The transistor supports a maximum DC collector current of -100 mA, a maximum collector emitter voltage of -65 V, and a maximum collector base voltage of -80 V. It has a minimum DC current gain (hFE) of 220, making it suitable for precise amplification tasks.

Operating temperature ranges from -55°C to 150°C, allowing usage in demanding automotive and industrial environments. This device is qualified to AEC-Q101 automotive standards and is RoHS compliant, assuring quality and environmental compliance.

The low package height of 0.5 mm and small footprint make it ideal for space-restricted applications within compact electronic assemblies. The side-wettable flanks enable automatic optical inspection (AOI) of solder joints for manufacturing quality control.

This transistor offers high power dissipation capability supporting reliable operation under various conditions. It is optimized for surface mount circuit board assembly, enabling compact, efficient designs.

Compact 3-Pin DFN1412D-3 SMD package with side-wettable flanks for solder joint inspection. Maximum DC collector current of -100 mA supports moderate power loads. Collector-emitter voltage rating of -65 V with collector base voltage of -80 V.

Minimum DC current gain (hFE) of 220 ensures good amplification performance. Wide operating temperature range of -55°C to 150°C for robust application use. AEC-Q101 qualified and RoHS compliant for automotive and environmentally safe use.

Low-profile package height of 0.5 mm enables space-saving layouts. Suitable for general purpose switching, amplification, and space-limited designs.

This Nexperia bipolar transistor is widely used in industrial, automotive, consumer electronics, and general electronic manufacturing sectors. It enables efficient circuit performance in modern compact devices. Explore more Bipolar Transistors and semiconductor components for your projects at EnvMart.

Nexperia PNP Transistor, Maximum DC Collector Current -100 mA, Max Collector Emitter Voltage -65 V, 3-Pin BC856BQC-QZ
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Frequently Asked Questions

The maximum DC collector current for this model is -100 mA.

It has a maximum collector-emitter voltage rating of -65 V.

The minimum DC current gain (hFE) is 220, which supports effective amplification.

The operating temperature range is from -55°C to 150°C, making it suitable for various environments.

It is housed in a 3-Pin DFN1412D-3 surface mount package.

Yes, it is qualified according to the AEC-Q101 automotive standard.

The maximum collector-base voltage rating is -80 V.

The maximum emitter-base voltage (VEBO) is -6 V.

The package height is 0.5 mm, allowing for space-saving designs.

This model is suitable for general-purpose switching and amplification in electronic circuits.

The country of origin for this transistor is India.

Yes, it is RoHS compliant, ensuring environmental safety.

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