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onsemi Transistor PNP 6 A 60 V 4-Pin SOT-223 Surface Mount NSV60600MZ4T1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.75mm
Length 6.7mm
Model NSV60600MZ4T1G
Width 3.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -65°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo -60V
Minimum DC Current Gain hFE 70
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO 100V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 800mW
Maximum DC Collector Current Idc -6A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Rated for a maximum collector current of -6 A providing robust current handling.
  • Supports a maximum collector-emitter voltage of -60 V suitable for medium voltage applications.
  • Surface mount SOT-223 package with 4 pins for efficient PCB mounting.
  • Minimum DC current gain (hFE) of 70 for reliable amplification performance.
  • Maximum power dissipation of 800 mW enabling thermal stability in typical conditions.
  • Operates within a temperature range from -65°C to 150°C suited for harsh environments.
  • Automotive grade transistor certified to AEC-Q101 standards for reliability.
  • Single transistor configuration with PNP polarity supports general purpose amplification.

Product Description

The onsemi NSV60600MZ4T1G is a high-performance bipolar transistor featuring PNP polarity and designed for surface mount applications in a compact 4-pin SOT-223 package. It supports a continuous collector current of -6 A and a maximum collector-emitter voltage of -60 V, making it suitable for various industrial and automotive electronics where medium power amplification and switching are needed.

This transistor delivers a minimum DC current gain (hFE) of 70, ensuring reliable signal amplification. Its maximum power dissipation of 800 mW allows it to operate efficiently without excessive heat build-up. The device maintains operational integrity across a broad temperature range from -65°C to 150°C, ideal for environments with fluctuating thermal conditions.

Certified to the stringent AEC-Q101 automotive standard, this transistor is engineered for high reliability in automotive and industrial contexts. Its single transistor, PNP configuration simplifies integration into circuit designs requiring general purpose amplification or switching.

Physical dimensions are compact with a length of 6.7 mm, width of 3.7 mm, and height of 1.75 mm, enabling use in space-constrained printed circuit boards. The SOT-223 surface mount package facilitates automated manufacturing and reduces assembly costs.

Rated for a maximum collector current of -6 A providing robust current handling. Supports a maximum collector-emitter voltage of -60 V suitable for medium voltage applications. Surface mount SOT-223 package with 4 pins for efficient PCB mounting.

Minimum DC current gain (hFE) of 70 for reliable amplification performance. Maximum power dissipation of 800 mW enabling thermal stability in typical conditions. Operates within -65°C to 150°C temperature range for demanding environments.

Automotive grade transistor certified to AEC-Q101 standards for high reliability. Single transistor PNP type for general-purpose use. Maximum transition frequency of 1 MHz suitable for moderate switching speed applications.

Compact size supports space-efficient circuit layouts.

This transistor is suitable for applications in industrial electronics, automotive control systems, power management modules, and general amplification circuits. It offers a reliable, durable solution for engineers and designers requiring robust Bipolar Transistors that meet automotive performance standards. EnvMart provides this onsemi transistor with detailed specifications and assured quality to support advanced semiconductor needs.

onsemi Transistor PNP 6 A 60 V 4-Pin SOT-223 Surface Mount NSV60600MZ4T1G
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Frequently Asked Questions

The maximum collector current for the onsemi NSV60600MZ4T1G is -6 A.

It supports a maximum collector-emitter voltage of -60 V, suitable for medium voltage applications.

The minimum DC current gain (hFE) is 70, ensuring reliable amplification performance.

The maximum power dissipation for this model is 800 mW, enabling thermal stability under typical conditions.

It operates within a temperature range from -65°C to 150°C, making it suitable for harsh environments.

This transistor comes in a surface mount SOT-223 package with 4 pins for efficient PCB mounting.

The maximum transition frequency is 1 MHz, suitable for moderate switching speed applications.

The dimensions are 6.7 mm in length, 3.7 mm in width, and 1.75 mm in height.

Yes, it is certified to the AEC-Q101 automotive standard for reliability in automotive contexts.

It features a single transistor configuration with PNP polarity for general-purpose amplification.

The maximum emitter-base voltage (VEBO) is -6 V.

This model is suitable for industrial electronics, automotive control systems, power management modules, and general amplification circuits.

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