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onsemi Small Signal PNP Transistor, Maximum DC Collector Current -1 A, Collector Emitter Voltage -100 V, 3-Pin TO-92 BC640TA
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 21.77mm |
| Length | 5.2mm |
| Model | BC640TA |
| Width | 4.19mm |
| Mount Type | Through Hole |
| Series | BC640 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | 0°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -100V |
| Minimum DC Current Gain hFE | 25 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Power Dissipation Pd | 1W |
| Maximum DC Collector Current Idc | -1A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
Key Features
- This transistor features a single configuration with PNP polarity.
- It supports through-hole mount type suitable for various PCB applications.
- The device has a maximum power dissipation of 1 W for reliable operation.
- Operational temperature ranges from 0°C up to 150°C, accommodating diverse environments.
- Maximum transition frequency of 100 MHz enables high-speed switching.
- Minimum DC current gain of 25 ensures stable amplification performance.
- Maximum collector base voltage is 100 V, with emitter base voltage up to -5 V.
- This transistor complies with no specific standards or automotive certifications and is suitable for general industrial use.
Product Description
onsemi BC640TA is a Small Signal PNP Transistor housed in a 3-pin TO-92 package, engineered for robust performance in a variety of industrial and electronic applications. With a maximum DC collector current of -1 A and maximum collector emitter voltage of -100 V, it is suitable for signal amplification and switching tasks in circuits requiring reliable PNP transistor operation.
This transistor supports through-hole mounting and features a single transistor configuration, optimizing ease of integration on printed circuit boards. It can dissipate up to 1 W of power, which ensures dependable functioning under thermal stress.
The operational temperature range spans from 0°C to 150°C, allowing deployment in environments ranging from standard commercial to moderately harsh industrial conditions. Its high maximum transition frequency of 100 MHz facilitates rapid switching speeds for signal processing.
The device dimensions are compact, measuring 21.77 mm in height, 5.2 mm in length, and 4.19 mm in width, making it suitable for space-constrained electronic assemblies. The minimum DC current gain (hFE) of 25 guarantees effective amplification in signal circuits.
Single PNP transistor configuration. Through hole mount type for PCB installation. Maximum power dissipation of 1 watt. Wide operating temperature range from 0°C to 150°C. High transition frequency of 100 MHz supporting high-speed switching.
Compact 3-Pin TO-92 package design. Maximum collector base voltage of 100 V and emitter base voltage of -5 V. Suitable for industrial, electronic, and laboratory applications requiring stable signal processing.
This transistor is ideal for use in industrial control circuits, signal amplification, and switching applications. It is commonly used in power regulation, audio amplifiers, and general-purpose transistor circuits.
Explore the Electronics & Electricals category on EnvMart for a broad range of Semiconductor components and Bipolar Transistors including onsemi products for your design and manufacturing needs.
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Frequently Asked Questions
The maximum DC collector current for this model is -1 A.
The maximum collector emitter voltage is -100 V.
The operational temperature range spans from 0°C to 150°C.
It is housed in a 3-pin TO-92 package.
The minimum DC current gain (hFE) is 25.
The maximum power dissipation is 1 W.
This transistor supports through-hole mounting.
The maximum transition frequency is 100 MHz.
The dimensions are 21.77 mm in height, 5.2 mm in length, and 4.19 mm in width.
The maximum emitter base voltage is -5 V.
It is commonly used in industrial control circuits, signal amplification, and switching applications.
The transistor configuration is single.
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