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DiodesZetex Switching Diode Single 1A 2-Pin DO-41 Package 1000V Peak Reverse Voltage UF1007-T
Specifications
| Country of Origin | China |
|---|---|
| Diameter | 2.72mm |
| Brand | DiodesZetex |
| Height | 2.72mm |
| Length | 5.21mm |
| Model | UF1007-T |
| Width | 2.72mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-41 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1.7V |
| Peak Reverse Recovery Time trr | 75ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 1000V |
Key Features
- This diode features a DO-41 package type for robust mechanical and electrical connection.
- Maximum peak reverse repetitive voltage of 1000 volts ensures suitability for high voltage applications.
- The maximum forward voltage is 1.7 volts providing efficient switching performance.
- It supports a peak non-repetitive forward surge current of 30 amperes for transient load scenarios.
- Operates reliably across a temperature range from -65°C to 150°C.
- An ultra-fast peak reverse recovery time of 75 nanoseconds enhances switching speed.
- The diode has two pins for electrical connectivity and a compact size of approximately 5.21 mm length and 2.72 mm diameter.
- Designed for industrial, electronic components, power management, and discrete semiconductor circuit use.
Product Description
DiodesZetex UF1007-T is a robust switching diode featuring a single silicon junction with a maximum forward current of 1 ampere and a through hole mount configuration in a DO-41 package.
This switching diode delivers a maximum peak reverse repetitive voltage of 1000 volts and a maximum forward voltage of 1.7 volts, making it ideal for applications requiring high voltage and efficient switching capabilities.
It supports a peak non-repetitive forward surge current of 30 amperes and operates reliably within the temperature range of -65°C to 150°C. The device's ultra-fast reverse recovery time of 75 nanoseconds ensures high-speed switching performance necessary in power supply, industrial automation, and electronic circuits.
The diode’s dimensions (length 5.21 mm, diameter 2.72 mm) and 2-pin design facilitate easy integration into through hole PCB layouts. DiodesZetex UF1007-T is well suited for industrial semiconductor switching roles including power management, rectification, and signal processing.
This diode features a DO-41 package type for robust mechanical and electrical connection. Maximum peak reverse repetitive voltage of 1000 volts ensures suitability for high voltage applications. The maximum forward voltage is 1.7 volts providing efficient switching performance.
It supports a peak non-repetitive forward surge current of 30 amperes for transient load scenarios. Operates reliably across a temperature range from -65°C to 150°C. An ultra-fast peak reverse recovery time of 75 nanoseconds enhances switching speed.
The diode has two pins for electrical connectivity and a compact size of approximately 5.21 mm length and 2.72 mm diameter. Manufactured in China under the DiodesZetex brand ensuring quality and performance standards.
This product fits within the Semiconductor Discrete Switching Diodes category and is a valuable component for electronics manufacturing, maintenance, repair, and prototyping activities.
For more Semiconductor components and switching diodes from trusted manufacturers, explore the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum peak reverse repetitive voltage of the UF1007-T diode is 1000 volts, making it suitable for high voltage applications.
This diode has a maximum forward current rating of 1 ampere, allowing it to handle moderate current levels in various applications.
The maximum forward voltage drop for this diode is 1.7 volts, which contributes to its efficient switching performance.
The UF1007-T supports a peak non-repetitive forward surge current of 30 amperes, suitable for transient load scenarios.
This model operates reliably within a temperature range of -65°C to 150°C, accommodating various environmental conditions.
The diode features an ultra-fast peak reverse recovery time of 75 nanoseconds, enhancing its switching speed.
It comes in a DO-41 package type, which provides robust mechanical and electrical connections.
The dimensions of this diode are approximately 5.21 mm in length and 2.72 mm in diameter, making it compact for integration into circuits.
This diode has a total of 2 pins for electrical connectivity, suitable for through hole mounting.
The UF1007-T features a single diode configuration, which is typical for discrete semiconductor applications.
The UF1007-T diode is manufactured in China, ensuring adherence to performance standards.
This diode is well suited for applications in power management, rectification, and signal processing within industrial and electronic circuits.
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