onsemi Small Signal PNP Transistor TO-92 Package 3-Pin 25 V 1.5 A SS8550DBU

onsemi SS8550DBU is a PNP bipolar junction transistor (BJT) designed for small signal amplification and switching tasks in electronic circuits. It features a maximum collector current of 1.5 amperes and a collector-emitter voltage rating of 25 volts, enabling it to operate in a wide range of low power applications.

This transistor is housed in a space-saving TO-92 3-pin package optimized for through-hole mounting on printed circuit boards. Its robust voltage ratings include a collector base voltage of 40 V and an emitter base voltage of 6 V, providing strong protection against over-voltage stress.

With a power dissipation rating of 1 watt and a maximum operating temperature of 150°C, the SS8550DBU transistor delivers reliable thermal performance for industrial, commercial, and hobbyist electronics use.

Its frequency transition capability reaches up to 200 MHz, making it suitable for signal amplification in audio, RF, and switching power circuits. The transistor offers a minimum DC current gain (hFE) of 40, which ensures effective signal amplification in analog and digital electronics.

Mechanical dimensions are compact with a length of 5.2 mm, height of 20.95 mm, and width of 3.05 mm, facilitating integration on space-constrained circuit boards. The device’s single transistor and PNP polarity configuration supports a broad array of discrete semiconductor applications.

Typical uses include signal switching and amplification in consumer electronics, instrumentation, automotive electronics, and industrial control systems. Housed in a compact TO-92 package with 3 pins for through-hole mounting.

Maximum collector base voltage rated at 40 V for robust switching. Power dissipation capacity of 1 watt ensures thermal stability in low power circuits. Frequency cutoff up to 200 MHz, suitable for high-frequency applications.

Operates up to a maximum temperature of 150°C for enhanced reliability. Minimum DC current gain of 40 ensuring efficient amplification. Emitter-base voltage maximum of 6 V to protect against over-voltage conditions. Compact dimensions facilitate easy PCB integration and mounting.

Single transistor configuration with PNP polarity for versatile applications. Ideal for use in industrial, automotive, and consumer electronic devices. Explore more components and detailed specifications in EnvMart's Electronics & Electricals category for discrete semiconductors.

Explore more products in our Bipolar Transistors category.