Infineon NPN Transistor 90 mA 12 V 3-Pin SOT-23 BFR93AE6327HTSA1

Infineon BFR93AE6327HTSA1 is an NPN bipolar transistor designed for high-frequency applications, supporting a maximum DC collector current of 90 mA and collector-emitter voltage of 12 V. It comes housed in a compact 3-pin SOT-23 surface mount package, suitable for space-constrained PCB designs.

This transistor offers reliable power dissipation up to 300 mW and a minimum DC current gain (hFE) of 70, facilitating effective signal amplification in RF and other electronic circuits. With a maximum transition frequency of 6 GHz, it is well-suited for RF amplification uses in telecommunications and signal processing.

Meeting the automotive standard AEC-Q101, the BFR93AE6327HTSA1 transistor ensures robustness and stability in automotive and industrial applications. Its operating temperature range up to 150°C supports use in demanding environments.

The device dimensions, including a length of 2.9 mm, width of 2.4 mm, and height of 1 mm, help optimize PCB real estate. It is mounted via surface mount technology enhancing automated assembly efficiency.

Supports maximum DC collector current of 90 mA. Maximum collector-emitter voltage rated at 12 V. Features a compact 3-pin SOT-23 surface mount package. Transistor polarity is NPN with single transistor configuration. Power dissipation capability of 300 mW ensures reliable operation.

Minimum DC current gain (hFE) of 70 for effective amplification. High maximum transition frequency of 6 GHz suitable for RF applications. Automotive standard compliant (AEC-Q101) ensuring quality and reliability. Operating temperature up to 150°C for demanding environments.

Small dimensions: length 2.9 mm, width 2.4 mm, height 1 mm.

This transistor is ideal for applications in industrial electronics, automotive systems, and wireless communication devices that require compact, high-frequency, and reliable bipolar transistors.

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