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Toshiba Bipolar NPN Transistor 300 mA 20 V 3-Pin SOT-346 2SC3326-A(TE85L,F)
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 1.26mm |
| Length | 2.9mm |
| Model | 2SC3326-A(TE85L,F) |
| Width | 2.5mm |
| Mount Type | Surface |
| Series | 2SC3326 |
| Maximum Operating Temperature | 125°C |
| Package Type | SOT-346 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 20V |
| Minimum DC Current Gain hFE | 200 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 25V |
| Maximum Collector Base Voltage VCBO | 50V |
| Maximum Power Dissipation Pd | 150mW |
| Maximum DC Collector Current Idc | 300mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 30MHz |
Key Features
- Maximum DC collector current of 300 mA ensures moderate power handling capability.
- Maximum collector-emitter voltage rated at 20 V provides reliable operation at low voltages.
- Compact 3-pin SOT-346 surface mount package suitable for high density PCB layouts.
- High current gain with a minimum DC current gain (hFE) of 200 for efficient amplification.
- Maximum power dissipation of 150 mW supports stable thermal performance.
- Compatible with electronic, power, and semiconductor applications requiring small signal transistors.
- Maximum transition frequency of 30 MHz for moderate frequency switching and amplification.
- Japanese origin ensuring quality manufacturing standards.
Product Description
The Toshiba 2SC3326-A(TE85L,F) is a small signal bipolar NPN transistor optimized for a variety of electronic applications including power and semiconductor devices. It features a maximum DC collector current of 300 mA and a collector-emitter voltage of 20 V. Encased in a compact 3-pin SOT-346 surface mount package, it facilitates high-density PCB assembly and reliable electrical performance.
This transistor's minimum DC current gain (hFE) of 200 provides effective amplification suitable for signal processing and switching tasks. With a maximum power dissipation of 150 mW, it maintains efficiency and thermal stability during operation. The transistor exhibits a maximum transition frequency of 30 MHz, enabling moderate speed switching applications.
Rated for a maximum operating temperature of 125°C, it is engineered to withstand industrial environmental conditions. Its construction as a single NPN transistor allows for typical bipolar junction transistor functionality in diverse electronics environments including consumer, industrial, and automotive sectors.
Additional key specifications include a maximum collector-base voltage of 50 V and maximum emitter-base voltage of 25 V. The device has precise, compact physical dimensions with a height of 1.26 mm, length of 2.9 mm, and width of 2.5 mm, making it suitable for compact electronic device assemblies.
Manufactured in Japan, the Toshiba 2SC3326-A(TE85L,F) transistor meets rigorous quality standards. This product is ideal for designers seeking reliable, small signal transistors for power and amplification circuits. It is commonly deployed in semiconductor discrete component applications for industrial, manufacturing, electronic assembly, and research laboratory use.
Set your designs apart with Toshiba's proven transistor technology, supported by comprehensive technical documentation and certifications. Explore the broad range of Toshiba semiconductor components at EnvMart for your next project.
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Frequently Asked Questions
The maximum DC collector current of the Toshiba 2SC3326-A(TE85L,F) is 300 mA.
This model has a maximum collector-emitter voltage rated at 20 V.
It is encased in a compact 3-pin SOT-346 surface mount package, suitable for high-density PCB layouts.
The minimum DC current gain (hFE) for this transistor is 200, allowing for efficient amplification.
The maximum power dissipation is 150 mW, supporting stable thermal performance during operation.
This transistor has a maximum transition frequency of 30 MHz, suitable for moderate frequency switching and amplification.
The transistor has a height of 1.26 mm, length of 2.9 mm, and width of 2.5 mm.
The maximum operating temperature is rated at 125°C, making it suitable for industrial applications.
It supports a maximum collector-base voltage of 50 V and a maximum emitter-base voltage of 25 V.
This model is configured as a single NPN transistor, typical for bipolar junction transistor functionality.
It is suitable for a variety of electronic applications, including power and semiconductor devices, signal processing, and switching tasks.
This transistor is manufactured in Japan, ensuring adherence to quality manufacturing standards.
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