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DiodesZetex Bipolar NPN Transistor 3 A 50 V 3-Pin SOT-89 2DC4672-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 4.25mm |
| Length | 4.6mm |
| Model | 2DC4672-13 |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | 2DC4672 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Minimum DC Current Gain hFE | 45 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 7V |
| Maximum Collector Base Voltage VCBO | 60V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 2W |
| Maximum DC Collector Current Idc | 3A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
Key Features
- This transistor features a maximum DC collector current of 3 A.
- Maximum collector emitter voltage is rated at 50 V for reliable performance.
- The transistor is housed in a compact 3-pin SOT-89 surface mount package.
- It operates with a maximum power dissipation of 2 W and a transition frequency of 1 MHz.
- Designed for industrial applications requiring durable NPN transistor performance.
- Minimum DC current gain is 45, providing efficient amplification.
- Operation temperature range spans from -55°C up to 150°C, ensuring reliability in harsh conditions.
- Meets automotive standard AEC-Q101, suitable for automotive electronics.
Product Description
The DiodesZetex 2DC4672-13 is a bipolar NPN transistor designed for high-reliability industrial and automotive applications. It features a maximum DC collector current of 3 amperes and withstands a collector emitter voltage of up to 50 volts, making it suitable for a variety of power amplification tasks.
Packaged in a compact 3-pin SOT-89 surface mount case, this transistor offers efficient power dissipation of 2 watts and a transition frequency of 1 MHz, suitable for medium-frequency switching and amplification applications. Its minimum DC current gain (hFE) of 45 ensures effective signal amplification in control circuits, industrial machinery, and automotive systems.
The device is engineered for durability, supporting operation temperatures ranging from -55°C to 150°C. Compliance with the AEC-Q101 automotive standard highlights its robustness in automotive electronics environments requiring stringent quality and reliability.
With dimensions of 4.6 mm length, 4.25 mm height, and 1.6 mm width, the 2DC4672-13 transistor is compact and ideal for space-constrained PCB layouts. Its construction supports surface mount assembly techniques, facilitating automated manufacturing processes.
This transistor is a versatile choice for electronic components, power connectors, and semiconductors used in industrial manufacturing, automotive electronics, and electronic device prototyping. It supports a range of applications that demand high collector current capacity and voltage tolerance combined with thermal stability.
Maximum DC collector current of 3 A. Collector emitter voltage rating of 50 V. Surface mount 3-pin SOT-89 package. Maximum power dissipation of 2 W. Transition frequency of 1 MHz. Minimum DC current gain of 45. Operating temperature range from -55°C to 150°C.
Meets automotive AEC-Q101 standard. Explore a wide range of Semiconductor components and transistors on EnvMart for high-performance industrial and automotive applications.
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Frequently Asked Questions
The maximum DC collector current of the 2DC4672-13 transistor is 3 A.
This transistor has a collector emitter voltage rating of 50 V.
The 2DC4672-13 is housed in a compact 3-pin SOT-89 surface mount package.
The maximum power dissipation for this model is 2 W.
It has a transition frequency of 1 MHz, suitable for medium-frequency applications.
The minimum DC current gain (hFE) is 45, allowing for effective signal amplification.
The operating temperature range spans from -55°C to 150°C.
This model complies with the AEC-Q101 automotive standard, ensuring reliability in automotive applications.
The dimensions of this transistor are 4.6 mm in length, 4.25 mm in height, and 1.6 mm in width.
It is a bipolar NPN transistor, designed for high-reliability applications.
The maximum emitter base voltage (VEBO) is rated at 7 V.
The maximum collector base voltage (VCBO) is 60 V.
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