Nexperia Isolated Trench MOSFET Dual N-Channel 350 mA 30 V Enhancement 6-Pin SC-88 NX3008NBKS,115

Nexperia NX3008NBKS,115 Isolated Trench MOSFET is a dual N-Channel transistor designed for use in surface-mounted electronic applications. It operates with a maximum continuous drain current of 350 mA and withstands drain-source voltages up to 30 V. This transistor utilizes enhancement mode channel technology delivered in a compact 6-pin SC-88 surface mount package, which facilitates integration into high-density circuit boards.

The device can dissipate up to 445 mW of power and is capable of operating efficiently over a wide temperature range from -55°C to +150°C. Its maximum gate-source voltage window ranges between -8 V and +8 V, providing robust control for switching applications. Typical gate charge at the specified gate voltage is minimal at 0.52 nC, which benefits fast switching and low power loss.

Designed with two N-Channel elements per chip, the MOSFET offers enhanced switching performance and reliability. It complies with the stringent automotive standard AEC-Q101, making it suitable for automotive and industrial electronic applications where quality and reliability are critical.

The transistor's physical dimensions are optimized for compact assemblies, measuring 2.2 mm in length, 1.35 mm in width, and 1 mm in height. This makes it ideal for applications requiring small footprints without sacrificing performance.

Ideal industrial and electronic use cases include power management in consumer electronics, signal switching in automotive systems, portable devices, and general semiconductor applications. The isolated trench structure helps reduce parasitic capacitances, improving overall efficiency in switching circuits.

This MOSFET features a compact 6-Pin SC-88 package suitable for surface mounting. It supports a maximum power dissipation of 445 mW and a gate-source voltage range of -8 to +8 V. Operational temperature ranges from -55°C up to 150°C, ensuring robust thermal performance.

Dual N-Channel elements per chip enhance switching efficiency and reliability. Typical gate charge is only 0.52 nC at Vgs, optimizing switching speed and power loss. Compliant with automotive standard AEC-Q101, suitable for automotive electronics applications.

Its small form factor dimensions are 2.2 mm length, 1.35 mm width, and 1 mm height. Discover more electronic components and semiconductors from Nexperia and explore high-quality MOSFETs tailored for modern applications on EnvMart.