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onsemi Darlington Transistor NPN 10 A 100 V DC 40 W TO-220 Package MJF6388G
Specifications
| Country of Origin | Korea |
|---|---|
| Brand | onsemi |
| Height | 16.12mm |
| Length | 10.63mm |
| Model | MJF6388G |
| Mount Type | Through Hole |
| Series | MJF6388 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 10A |
| Maximum Collector Emitter Voltage Vceo | 100V dc |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V dc |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 100V dc |
| Maximum Collector Cut-off Current | 10μA |
| Maximum Power Dissipation Pd | 40W |
| onsemi MJF6388G 1 Darlington Transistor NPN, 10 A 100 V dc HFE | 100, 3-Pin TO-220 |
Key Features
- The transistor has a maximum continuous collector current of 10 A.
- It supports a collector-emitter voltage up to 100 V DC for versatile power handling.
- The TO-220 package with 3 pins is suitable for through-hole mounting.
- The device offers a minimum DC current gain (hFE) of 100 for efficient amplification.
- It features a maximum power dissipation of 40 W for reliable thermal performance.
- The transistor polarity is NPN, ideal for common amplifier circuits.
- It operates reliably across a temperature range from -65°C to 150°C.
- This component does not require isolating washers due to its isolated overmold design.
Product Description
onsemi MJF6388G is a Darlington Transistor designed for high-current amplifier and switching applications in industrial and electronic circuits. It features an NPN polarity and is housed in a TO-220 isolated overmold package that electrically isolates the mounting surface from the heatsink or chassis, eliminating the need for isolating washers and reducing system cost.
Its maximum continuous collector current is rated at 10 A with a collector-emitter voltage of 100 V DC, making it suitable for demanding power applications. The device offers a high minimum DC current gain (hFE) of 100, providing strong amplification capabilities.
The transistor supports a maximum power dissipation of 40 W and operates efficiently over a wide temperature range from -65°C to 150°C. It delivers a maximum collector-emitter saturation voltage of 2 V and a maximum emitter-base voltage of 5 V DC, ensuring robust performance in switching environments.
Ideal for industrial and laboratory electronics, power management, and amplifier design, the MJF6388G transistor provides proven reliability and simplified mounting. It is electrically similar to the popular 2N6388 and TIP102 series and is manufactured in Korea.
The transistor has a maximum continuous collector current of 10 A. Collector-emitter voltage rating of 100 V DC ensures durability. Package Type: TO-220 with 3 pins for through-hole mount. Minimum DC current gain (hFE) of 100 for efficient switching and amplification.
Maximum power dissipation of 40 W supports high power solutions. Operating temperature range from -65°C to 150°C for versatile environments. Isolated overmold package reduces system cost by eliminating isolating washers.
Manufactured in Korea, ensuring quality and performance standards. Explore this transistor under the Electronics & Electricals category at EnvMart for applications in power amplification, switching circuits, and electronic component integration.
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Frequently Asked Questions
The maximum continuous collector current for the MJF6388G is rated at 10 A.
It has a collector-emitter voltage rating of 100 V DC, making it suitable for demanding power applications.
The maximum power dissipation for this transistor is 40 W, supporting high power solutions.
This model operates efficiently over a wide temperature range from -65°C to 150°C.
It is housed in a TO-220 package type, which is suitable for through-hole mounting.
The minimum DC current gain (hFE) for the MJF6388G is 100, providing strong amplification capabilities.
This transistor features a 3-pin configuration.
The maximum collector-emitter saturation voltage (VceSAT) is 2 V.
The transistor polarity of this model is NPN, making it suitable for common amplifier circuits.
The maximum emitter-base voltage (VEBO) is 5 V DC.
This transistor is manufactured in Korea, ensuring adherence to quality and performance standards.
It is ideal for high-current amplifier and switching applications in industrial and electronic circuits.
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