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| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 4.58mm |
| Length | 10.67mm |
| Model | FFSB1065B-F085 |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | EliteSiC |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Pb-Free, RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Maximum Continuous Forward Current If | 27A |
| Peak Reverse Repetitive Voltage Vrrm | 650V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 160A |
| Peak Non-Repetitive Forward Surge Current Ifsm | 650A |
| Maximum Forward Voltage Vf | 2.4V |
onsemi FFSB1065B-F085 Silicon Carbide (SiC) Schottky Diode is a high-performance power semiconductor designed for demanding industrial and automotive applications. This discrete semiconductor features a maximum continuous forward current of 27 A and a peak reverse repetitive voltage of 650 V, housed in a robust TO-263 (D2PAK) surface mount package with three pins. Its silicon carbide technology delivers superior switching speeds with no reverse recovery current, which significantly improves system efficiency and reduces electromagnetic interference.
This diode operates reliably in a wide temperature range from -55°C to 175°C and supports a peak non-repetitive forward surge current up to 650 A, making it suitable for harsh electrical environments. The device's maximum forward voltage drop of 2.4 V contributes to lower conduction losses.
Key features include a positive temperature coefficient that facilitates paralleling multiple devices for higher current applications and compliance with automotive standards (AEC-Q101), underscoring its suitability for HEV-EV onboard chargers, DC-DC converters, and other automotive power electronics.
The diode is Pb-Free and conforms to RoHS directives, ensuring environmental compliance. It is manufactured in China and part of the EliteSiC series, representing the next generation of power semiconductor devices that offer enhanced power density, faster operation, and reduced system cost.
Advanced Silicon Carbide technology ensures superior switching performance and reliability. Surface mount TO-263 package with three pins suitable for automated assembly. High surge current capacity supports transient electrical loads.
Wide operating temperature range caters to industrial and automotive environments. Positive temperature coefficient supports paralleling for scalable current ratings. Low forward voltage drop improves efficiency and reduces power loss.
Compliant with AEC-Q101 automotive standard for quality and reliability. Pb-Free and RoHS compliant ensuring environmental safety.
This product is ideal for use in industrial power supplies, automotive charging systems, DC-DC converters, and other applications requiring robust, high-efficiency diode solutions. Explore more semiconductor devices on EnvMart to meet your design and production needs.
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