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Microchip Type P-Channel Enhancement MOSFET 140 A 30 V 3-Pin TO-92 VP0106N3-G
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Model | VP0106N3-G |
| Mount Type | Through Hole |
| Series | VP0106 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 140A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.8V |
Key Features
- Maximum continuous drain current of 140 amperes ensures robust power handling.
- Supports maximum drain-source voltage of 30 volts suitable for various voltage applications.
- Equipped with a low drain-source resistance of 8 milliohms to improve efficiency.
- Packaged in a compact TO-92 through-hole 3-pin format for easy mounting.
- Enhancement mode operation provides normally-off transistor behavior for safety and control.
- Can operate reliably across a wide temperature range from -55°C to 150°C.
- Maximum power dissipation rated at 1.6 watts to prevent thermal damage.
- Maximum gate-source voltage of 20 volts for high control input range.
Product Description
The Microchip VP0106N3-G is a Type P-Channel enhancement-mode MOSFET packaged in a TO-92 3-pin through-hole form factor. Designed with a vertical DMOS structure and silicon-gate manufacturing process, it provides power capabilities comparable to bipolar transistors with high input impedance and positive temperature coefficient characteristics.
This device boasts a maximum continuous drain current of 140 A and a maximum drain-source voltage rating of 30 V, making it well-suited for high power switching and amplification requirements in industrial and electronic applications. The low maximum drain-source resistance of 8 milliohms ensures low conduction losses and increased efficiency.
Its enhancement-mode operation delivers normally-off switching for safety and ease of control. The MOSFET's thermal operating range from -55°C to 150°C and maximum power dissipation of 1.6 W provide robust performance under harsh environmental conditions. Moreover, the device supports a maximum gate-source voltage of 20 V, allowing for a wider control signal range.
Characteristic advantages include freedom from thermal runaway and secondary breakdown due to its vertical DMOS design, integral source-drain diode for reverse voltage protection, low power drive requirements, and ease of paralleling in circuits.
Excellent thermal stability with high input impedance and gain. Fast switching speeds with low input capacitance enabling efficient operation. Ideal for use in industrial, electronics manufacturing, and power management applications.
Uses a 3-pin TO-92 through-hole package providing ease of mounting on PCB assemblies. Safe operation ensured by the enhancement mode, normally-off transistor structure. Typical applications include power switching circuits, amplification devices, and electronic control modules requiring reliable high current and voltage performance.
Explore more Microchip semiconductors and MOSFET components in the Electronics & Electricals section on EnvMart.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for the Microchip VP0106N3-G is 140 amperes.
This model supports a maximum drain-source voltage of 30 volts.
It has a low maximum drain-source resistance of 8 milliohms, which helps improve efficiency.
The MOSFET operates reliably across a temperature range from -55°C to 150°C.
The maximum power dissipation rated for this device is 1.6 watts.
It supports a maximum gate-source voltage of 20 volts, allowing for a wider control signal range.
This model is packaged in a TO-92 3-pin through-hole format for easy mounting.
It is a Type P-Channel enhancement-mode MOSFET.
Typical applications include power switching circuits, amplification devices, and electronic control modules requiring high current and voltage performance.
The vertical DMOS design provides freedom from thermal runaway and secondary breakdown, along with integral source-drain diode for reverse voltage protection.
The VP0106N3-G has a pin count of 3.
The forward voltage for this MOSFET is 1.8 volts.
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