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Vishay Silicon Diode, Single, 300 mA, 75 V, 3-Pin SOT-23 Package BAS16-HE3-08

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Vishay Silicon Diode, Single, 300 mA, 75 V, 3-Pin SOT-23 Package BAS16-HE3-08

Name: Vishay Silicon Diode, Single, 300 mA, 75 V, 3-Pin SOT-23 Package BAS16-HE3-08
Brand: Vishay
SKU: 250205
Price: 0.03 USD
Availability: InStock

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Category Switching Diodes Brand Vishay Condition New

Specifications

Country of Origin	China
Brand	Vishay
Height	1.15mm
Length	3.1mm
Model	BAS16-HE3-08
Width	2.6mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Sub Type	Silicon Diode
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Power Dissipation Pd	500mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	1A
Maximum Forward Voltage Vf	1V
Peak Reverse Recovery Time trr	6ns
Maximum Forward Current If	300mA
Maximum Peak Reverse Repetitive Voltage Vrrm	75V

Key Features

The diode features silicon epitaxial planar technology for fast switching performance.
The device supports a maximum forward current of 300 mA and peak surge current of 1 A.
It has a maximum power dissipation of 500 mW and a low forward voltage of approximately 1 V.
The package dimensions are compact with length 3.1 mm, width 2.6 mm, and height 1.15 mm.
Operating temperature ranges from -65°C to 150°C, suitable for various industrial and electronic applications.
The diode has a peak reverse recovery time of 6 nanoseconds for high-speed switching.
The component is surface mount compatible for automatic insertion assembly.
It is RoHS-compliant and AEC-Q101 qualified for automotive applications.

Product Description

Vishay BAS16-HE3-08 Silicon Diode is a high-performance single diode designed for fast switching applications in industrial, electronic, and automotive environments. This diode utilizes silicon epitaxial planar technology and comes in a compact 3-pin SOT-23 surface mount package ideal for automated PCB assembly.

The diode supports a maximum forward current of 300 mA, with a peak non-repetitive forward surge current of 1 A. It features a maximum power dissipation rating of 500 mW and a low forward voltage drop of approximately 1 V, which helps in efficient conduction with minimal power loss.

This device withstands a maximum peak reverse repetitive voltage of 75 V and offers a peak reverse recovery time of 6 nanoseconds, making it ideal for fast switching circuits requiring quick recovery and reduced switching losses.

The diode operates reliably within a wide temperature range from -65°C to as high as 150°C, making it suitable for demanding industrial and automotive applications. Its small form factor dimensions of 3.1 mm length, 2.6 mm width, and 1.15 mm height facilitate compact design implementations.

Single diode with silicon epitaxial planar technology offers high switching speed. Surface mount SOT-23 package with 3 pins supports automated assembly. Max forward current: 300 mA and peak surge current: 1 A ensure robust performance.

Max power dissipation of 500 mW and max forward voltage of 1 V for energy efficiency. Peak reverse recovery time of 6 ns suitable for fast switching requirements. Operating temperature range from -65°C to 150°C for diverse environments.

AEC-Q101 qualified and RoHS-compliant for automotive and environmentally safe use. Compact dimensions (3.1 x 2.6 x 1.15 mm) for space-constrained designs.

This Vishay silicon diode model BAS16-HE3-08 is manufactured in China and is a reliable component choice for designers working on power electronics, signal switching, automotive circuits, and other semiconductor switching diode applications.

Explore more high-quality Switching Diodes and semiconductor components in EnvMart’s Electronics & Electricals Catalog to support your industrial design and manufacturing needs.