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| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.7mm |
| Length | 3.9mm |
| Model | 1N4448TR |
| Width | 1.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-35 |
| Sub Type | Silicon Diode |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Maximum Power Dissipation Pd | 500mW |
| Diode Configuration | Small Signal Diode |
| Peak Non-Repetitive Forward Surge Current Ifsm | 2A |
| Maximum Forward Voltage Vf | 1V |
| Peak Reverse Recovery Time trr | 4ns |
| Maximum Forward Current If | 300mA |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 75V |
Vishay 1N4448TR is a silicon epitaxial small signal fast switching diode designed for applications requiring rapid switching and low forward voltage drop. It is housed in a through hole DO-35 package with 2 pins and compact dimensions of 3.9 mm length and 1.7 mm width and height. The diode is rated for a maximum forward current of 300 mA and can dissipate up to 500 mW of power, ensuring reliable performance in demanding environments.
The maximum reverse voltage rating of 75 V and a peak non-repetitive forward surge current of 2 A make this diode robust against voltage spikes and transient surges. With a peak reverse recovery time of only 4 nanoseconds, the 1N4448TR is well suited for use in high-speed switching applications such as signal modulation, waveform generation, and microcontroller input protection.
Operating temperature expands from -55°C to 175°C, enabling use in industrial, laboratory, and commercial electronic systems. The small size and through hole mounting facilitate easy integration into printed circuit boards, ideal for embedded designs and prototyping.
The diode uses a through hole DO-35 package suitable for PCB mounting. Supports maximum power dissipation of 500 mW for stable operation. Peak reverse recovery time is 4 nanoseconds, enabling high-speed switching performance.
Operating temperature ranges from -55°C to 175°C for broad environmental compatibility. Maximum forward voltage of 1 V and peak non-repetitive forward surge current of 2 A resist voltage surges. Applications include fast switching circuits, microcontroller interface protection, and other electronic signal conditioning setups.
Explore more switching diode products and related semiconductors in the Electronics & Electricals category at EnvMart.
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