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Vishay N-Channel Power MOSFET 20A, 40V Enhancement, 8-Pin SO-8 TrenchFET Surface Mount SI7288DP-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.07mm |
| Length | 5.99mm |
| Model | SI7288DP-T1-GE3 |
| Width | 5mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | +150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 22mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 15.6W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Transistor Configuration | Isolated |
Key Features
- Dual N-Channel isolated transistor configuration for efficient switching applications.
- TrenchFET series designed for low on-resistance and high-speed switching.
- Maximum power dissipation of 15.6W supports demanding thermal conditions.
- Operates reliably from -55°C to +150°C ensuring broad temperature range tolerance.
- Pin count of 8 in a compact SO-8 package suitable for surface mounting.
- Enhancement mode channel for easy drive and control in power circuits.
- Low gate charge of 10nC enables fast switching and improved efficiency.
- Maximum gate-source voltage range of -20V to +20V for versatile circuit design.
Product Description
Vishay SI7288DP-T1-GE3 is a high-performance N-Channel Power MOSFET designed for various industrial and electronic applications. This device features a dual isolated transistor configuration within a compact SO-8 package, making it suitable for space-constrained high-efficiency circuits.
Its TrenchFET technology offers very low on-resistance (22 milliohms max) and fast switching characteristics which contribute to reduced power losses and improved overall system efficiency. The device supports a maximum continuous drain current of 20 amperes and withstands drain-source voltages up to 40 volts.
Designed for surface mount technology, the SO-8 package with 8 pins allows for easy integration onto printed circuit boards commonly used in power electronics, automotive, and industrial control systems. The enhancement mode channel ensures straightforward driving with a maximum gate-source voltage range of -20 to +20 volts. Additionally, the MOSFET can dissipate up to 15.6 watts, supporting demanding load conditions while maintaining reliable operation within a temperature range from -55°C to +150°C.
Typical gate charge of 10 nanocoulombs enables rapid switching speeds, making this MOSFET ideal for power management, DC-DC converters, and motor control circuits. Its compact size (5.99mm × 5mm × 1.07mm) and dual transistor elements per chip provide an optimal balance of performance and size.
Dual N-Channel isolated transistor configuration. Low on-resistance at 22 milliohms maximum. Supports continuous drain current up to 20A. Maximum drain-source voltage of 40V. Maximum power dissipation of 15.6W. Operating temperature range from -55°C to +150°C.
8-Pin SO-8 surface mount package for compact PCB design. Enhancement mode channel for efficient control. Typical gate charge of 10nC for fast switching. Dimensions: length 5.99mm, width 5mm, height 1.07mm.
This MOSFET is widely used across industrial, electronic, and power management fields, particularly suited to applications requiring reliable, high-efficiency N-Channel transistors in surface mount form factors. It is essential for engineers designing power supply units, motor drivers, and high-speed switching circuits.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20A.
It can withstand a maximum drain-source voltage of 40V.
The typical gate charge is 10nC, which allows for fast switching.
The maximum power dissipation is 15.6W, suitable for demanding thermal conditions.
It operates reliably within a temperature range from -55°C to +150°C.
This model comes in an 8-pin SO-8 surface mount package.
The maximum on-resistance is 22 milliohms.
It features a dual N-Channel isolated transistor configuration.
The maximum gate-source voltage range is -20V to +20V.
The dimensions are 5.99mm in length, 5mm in width, and 1.07mm in height.
It uses an enhancement mode channel for efficient control.
This model belongs to the TrenchFET series, designed for low on-resistance and high-speed switching.
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