Nexperia N-Channel MOSFET 100 A, 30 V Enhancement Surface Mount LFPAK 4-Pin PSMN1R5-30YLC,115

Nexperia PSMN1R5-30YLC,115 N-Channel MOSFET is a high performance enhancement mode transistor designed for applications requiring a maximum continuous drain current of 100 A and a maximum drain source voltage of 30 V. The device is packaged in a compact LFPAK 4-pin surface mount format, optimized for efficient heat dissipation and ease of PCB integration.

This MOSFET offers a low maximum drain source resistance of 2 milliohms, contributing to minimal conduction losses during operation. It has a maximum power dissipation capacity of 179 W, making it suitable for high power switching and amplification tasks in electronic circuits.

The device operates reliably over a wide temperature range from -55°C to +175°C, supporting industrial and automotive environments without degradation. The typical gate charge of 65 nC measured at the specified gate-source voltage ensures efficient switching speeds and low gate drive power requirements.

Physical dimensions are compact with a length of 5 mm, width of 4.1 mm, and height of 1.05 mm, enabling high-density PCB layouts. The gate can safely withstand voltages ranging from -20 V to +20 V, enhancing robustness against transient voltage spikes.

This MOSFET finds extensive use in industrial power electronics, automotive electronics systems, power management solutions, and other commercial electronic products requiring robust discrete power semiconductor devices.

This MOSFET features an enhancement mode channel for precise switching performance. The package is LFPAK with a 4-pin configuration suitable for surface mounting. Maximum drain source resistance is 2 milliohms, ensuring efficient conduction.

It supports a maximum power dissipation of 179 W for high performance applications. Operating temperature range spans from -55°C to 175°C, suitable for harsh environments. Typical gate charge at gate-source voltage is 65 nanocoulombs controlling switching efficiency.

Compact physical dimensions allow for space-saving PCB designs. Maximum gate source voltage ranges from -20 V to +20 V ensuring reliable control.

This product is categorized under discrete semiconductors with applications in semiconductors for power control and switching. It is ideally suited for use in industrial, automotive, laboratory, and manufacturing electrical systems.

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