Vishay Isolated TrenchFET Dual Type P and N-Channel Power MOSFET 12 V, 4.5 A, 6-Pin SC-70 SIA517DJ-T1-GE3

Vishay SIA517DJ-T1-GE3 is a dual Type P and Type N-channel isolated TrenchFET power MOSFET designed for efficient power switching and control in electronic circuits. This transistor is housed in a compact 6-pin SC-70 surface mount package, measuring 2.15 mm in length and width, and 0.8 mm in height, suitable for space-constrained applications.

The device supports a maximum continuous drain current of 4.5 A at a maximum drain-source voltage of 12 V, making it an ideal choice for low-voltage, high-efficiency power management. It features a low typical drain-source resistance of 170 milliohms, enhancing its switching efficiency and reducing power loss.

Designed with an enhancement mode channel and isolated transistor configuration, the SIA517DJ-T1-GE3 offers reliable operation with protection against electrical interference. The maximum gate-source voltage rating is ±8 V, suitable for typical gate drive circuits. It has a maximum power dissipation rating of 6.5 W, allowing effective conduction without overheating.

The operational temperature range spans from -55°C to +150°C, ensuring durability and reliability across demanding industrial, automotive, and consumer electronics environments. Typical gate charge is 9.7 nC at the specified gate voltage, providing fast switching necessary for efficient power regulation.

This power MOSFET is commonly used in power management circuits, DC-DC converters, load switching, and motor control applications in electronic systems that require compact, reliable transistor solutions.

Dual N/P-channel MOSFET configuration for versatile switching applications. Maximum continuous drain current of 4.5 amperes ensures robust power handling. Compact SC-70 surface mount package with 6 pins and dimensions of 2.15 mm by 2.15 mm by 0.8 mm.

Low maximum drain-source resistance of 170 milliohms improves efficiency. Supports enhancement mode channel operation for reliable switching. Wide operating temperature range from -55°C to +150°C ensures durability. Maximum gate-source voltage of ±8 V protects the gate during operation.

Maximum power dissipation of 6.5 watts allows effective thermal management. Isolated transistor configuration prevents undesired electrical interference. Typical gate charge of 9.7 nanocoulombs provides fast switching performance.

Explore the Power MOSFET category at EnvMart for solutions designed to meet demanding industrial, automotive, and electronic device needs with trusted brands like Vishay.