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Vishay Silicon Junction Switching Diode 1 A 600 V 2-Pin Surface Mount DO-213AB RGL41J-E3/96
Specifications
| Country of Origin | Taiwan |
|---|---|
| Diameter | 2.67mm |
| Brand | Vishay |
| Height | 1.15mm |
| Length | 5.2mm |
| Model | RGL41J-E3/96 |
| Width | 2.05mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-213AB |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1.3V |
| Peak Reverse Recovery Time trr | 250ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 600V |
Key Features
- This switching diode features a 2-pin surface mount DO-213AB package for compact PCB integration.
- Designed for high efficiency with low forward voltage drop of 1.3 V.
- Capable of handling surge currents up to 30 A for transient conditions.
- Operates reliably over a wide temperature range from -65°C to 175°C for industrial use.
- Peak reverse recovery time is 250 ns enabling fast switching performance.
- Ideal for applications in power rectification, fast recovery circuits, and industrial electronic devices.
Product Description
Vishay RGL41J-E3/96 is a Silicon Junction Switching Diode designed for efficient power rectification applications. Featuring a single diode configuration in a DO-213AB 2-pin surface mount package, it supports a maximum forward current of 1 ampere and a maximum repetitive peak reverse voltage of 600 volts. This diode is built for fast recovery with a peak reverse recovery time of 250 nanoseconds, making it suitable for high-speed switching circuits.
This fast recovery rectifier diode operates reliably across an extended temperature range from -65°C to 175°C, providing robustness for harsh industrial environments. Its low forward voltage drop of 1.3 volts ensures energy efficiency and reduced heat generation in power electronics assemblies.
Key physical dimensions include a length of 5.2 mm, width of 2.05 mm, height of 1.15 mm, and diameter of 2.67 mm, allowing for compact placement on printed circuit boards. The diode's capability to withstand peak non-repetitive surge currents of up to 30 amperes adds transient protection during power spikes.
Manufactured in Taiwan, this Vishay diode emphasizes reliability and quality for demanding electronic applications. It is widely used in industrial, laboratory, manufacturing, and power supply scenarios where fast switching and durability are essential.
This switching diode features a 2-pin surface mount DO-213AB package for compact PCB integration. Designed for high efficiency with low forward voltage drop of 1.3 V. Capable of handling surge currents up to 30 A for transient conditions.
Operates reliably over a wide temperature range from -65°C to 175°C for industrial use. Peak reverse recovery time is 250 ns enabling fast switching performance. Dimensions include length 5.2 mm, width 2.05 mm, height 1.15 mm, and diameter 2.67 mm.
Ideal for applications in power rectification, fast recovery circuits, and industrial electronic devices.
Browse the Electronics & Electricals, Discrete Semiconductors, and Switching Diodes categories at EnvMart for more high-quality Semiconductor components from Vishay and other trusted brands.
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Frequently Asked Questions
The maximum forward current rating of this model is 1 ampere.
The peak reverse recovery time for this diode is 250 nanoseconds.
It can handle a maximum repetitive peak reverse voltage of 600 volts.
The dimensions of the package are 5.2 mm in length, 2.05 mm in width, and 1.15 mm in height, with a diameter of 2.67 mm.
This diode operates reliably over a wide temperature range from -65°C to 175°C.
It is capable of handling peak non-repetitive surge currents of up to 30 amperes.
This model features a surface mount configuration.
It is commonly used in power rectification, fast recovery circuits, and industrial electronic devices.
The forward voltage drop is 1.3 volts, which contributes to its energy efficiency.
This diode has a single diode configuration.
This model is manufactured in Taiwan.
This diode is classified as a silicon junction semiconductor.
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