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onsemi 4-Element Uni-Directional TVS Diode Array 500 W 8-Pin SOIC NUP4201DR2G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | NUP4201DR2G |
| Width | 4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 4 |
| Clamping Voltage VC | 25V |
| Diode Configuration | Complex Array |
| Direction Type | Uni-Directional |
| Minimum Breakdown Voltage Vbr | 6V |
| Peak Pulse Power Dissipation Pppm | 500W |
| Test Current It | 1mA |
| Maximum Reverse Leakage Current | 10μA |
Key Features
- This diode array supports transient voltage suppression for sensitive electronics.
- Uni-directional configuration ensures effective protection against positive transients.
- Constructed with a complex diode arrangement of 4 elements on a chip.
- Surface mount device with a compact SOIC package measuring 5 mm length by 4 mm width and 1.5 mm height.
- Operates reliably within temperature range of -55°C to +150°C.
- Minimum breakdown voltage is 6 V, offering protection starting at this voltage level.
- Clamping voltage is 25 V to prevent voltage spikes exceeding this threshold.
- Maximum reverse leakage current is low at 10 μA, ensuring minimal power loss.
Product Description
onsemi NUP4201DR2G 4-Element Uni-Directional TVS Diode Array delivers transient voltage suppression with a peak pulse power dissipation rated at 500 W. This surface mount SOIC package features 8 pins and a compact form factor of 5 mm length, 4 mm width, and 1.5 mm height, making it suitable for densely packed circuit boards.
Designed for protecting sensitive electronic devices against electrostatic discharge (ESD) and transient voltage spikes, this diode array is configured with four elements integrated in a complex array. Its uni-directional nature provides efficient suppression of positive transient voltages, safeguarding equipment in consumer electronics, industrial controls, and telecommunications.
The device operates within a wide temperature range from -55°C to 150°C, ensuring reliability in harsh environments. It has a minimum breakdown voltage of 6 V and a clamping voltage of 25 V, effectively limiting voltage spikes to safe levels. The maximum reverse leakage current of 10 μA minimizes power loss and improves overall circuit efficiency.
This product is ideal for industrial, laboratory, manufacturing, and electronic assembly applications where protection against transient voltages is critical. Its surface mount design supports automated PCB assembly, enhancing production throughput and product reliability.
This diode array supports transient voltage suppression for sensitive electronics. Uni-directional configuration ensures effective protection against positive transients. Constructed with a complex diode arrangement of 4 elements on a chip.
Surface mount device with a compact SOIC package measuring 5 mm length by 4 mm width and 1.5 mm height. Operates reliably within temperature range of -55°C to +150°C. Minimum breakdown voltage is 6 V, offering protection starting at this voltage level.
Clamping voltage is 25 V to prevent voltage spikes exceeding this threshold. Maximum reverse leakage current is low at 10 μA, ensuring minimal power loss. Test current specified at 1 mA confirms device performance. ESD protection capability is confirmed, suitable for high-speed data lines and power circuits.
Explore a wide range of TVS Diode Arrays and semiconductor products available at EnvMart for high quality and performance. Choose onsemi products for trusted transient voltage protection solutions.
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Frequently Asked Questions
The NUP4201DR2G has a peak pulse power dissipation rated at 500 W.
The minimum breakdown voltage is 6 V, providing protection starting at this voltage level.
The clamping voltage is 25 V, which helps prevent voltage spikes from exceeding this threshold.
It operates reliably within a temperature range of -55°C to +150°C.
This model features a complex array configuration with 4 elements integrated on a chip.
The maximum reverse leakage current is 10 μA, ensuring minimal power loss.
The diode array comes in a surface mount SOIC package.
The dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.
This model has a pin count of 8.
It is suitable for protecting sensitive electronic devices in consumer electronics, industrial controls, and telecommunications.
The test current is specified at 1 mA, confirming the device's performance.
The country of origin for this model is India.
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