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Vishay Isolated TrenchFET 2 N-Channel Power MOSFET, 1.3 A, 20 V Enhancement, 6-Pin SC-88 SI1922EDH-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1mm |
| Length | 2.2mm |
| Model | SI1922EDH-T1-GE3 |
| Width | 1.35mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | +150°C |
| Package Type | SC-88 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.3A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 263mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.25W |
| Typical Gate Charge Qg @ Vgs | 1.6nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Transistor Configuration | Isolated |
Key Features
- This device features an isolated trenchFET 2 series structure for improved performance.
- Offers a maximum drain-source resistance (Rds) of 263 milliohms.
- Supports an enhancement channel mode for effective switching.
- Typical gate charge at Vgs is 1.6 nC for efficient gate drive.
- Maximum gate-source voltage ranges from -8 V to +8 V.
- Designed for surface mount with a compact 6-pin SC-88 package.
- Operates reliably in temperatures ranging from -55°C to +150°C.
- Dual N-Channel transistor configuration provides advanced power management.
Product Description
Vishay SI1922EDH-T1-GE3 is a high-quality isolated trenchFET 2 N-Channel power MOSFET designed for efficient electronic power management and switching applications. With a continuous drain current of 1.3 A and a maximum drain-source voltage of 20 V, this device guarantees reliable operation in demanding industrial, consumer electronics, and automotive fields.
This MOSFET features a surface mount 6-pin SC-88 package, enabling compact PCB designs and effective thermal performance. Its enhancement mode channel configuration and low typical gate charge of 1.6 nC at Vgs support fast switching and low power gate drive requirements.
Built with dual N-Channel transistor elements, the SI1922EDH-T1-GE3 offers improved efficiency and control. The device is engineered to withstand operating temperatures from -55°C to +150°C, suitable for harsh environments.
The physical package measures 2.2 mm in length, 1.35 mm in width, and 1 mm in height, making it a compact solution for space-constrained circuits.
Key features include a maximum drain-source resistance of 263 milliohms and a transistor configuration that isolates and optimises power performance across applications such as power supply design, motor controls, and industrial automation.
This device features an isolated trenchFET 2 series structure for improved performance. Offers a maximum drain-source resistance (Rds) of 263 milliohms. Supports an enhancement channel mode for effective switching. Typical gate charge at Vgs is 1.6 nC for efficient gate drive.
Maximum gate-source voltage ranges from -8 V to +8 V. Designed for surface mount with a compact 6-pin SC-88 package. Operates reliably in temperatures ranging from -55°C to +150°C. Dual N-Channel transistor configuration provides advanced power management.
Physical dimensions approximately 2.2 mm length, 1.35 mm width, and 1 mm height.
This component is ideal for integration in industrial power control systems, laboratory equipment, consumer electronics, automotive electronics, and other fields requiring robust, compact power transistors.
Explore the full range of Vishay electronic components and Power MOSFETs on EnvMart for optimized industrial applications and improved electronic design efficiency.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.3 A.
It can handle a maximum drain-source voltage of 20 V.
The typical gate charge at Vgs is 1.6 nC.
The physical dimensions are approximately 2.2 mm in length, 1.35 mm in width, and 1 mm in height.
The maximum drain-source resistance (Rds) is 263 milliohms.
It operates reliably in temperatures ranging from -55°C to +150°C.
The package type is SC-88, designed for surface mount applications.
This device features an N-channel configuration.
The maximum gate-source voltage ranges from -8 V to +8 V.
This model has 6 pins.
It features a dual N-Channel transistor configuration, which is isolated.
This device belongs to the TrenchFET series.
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