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onsemi 2 V 50 mA Surface Mount Schottky Diode X2-DFN 2-Pin NSR201MXT5G
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 0.35mm |
| Length | 1.05mm |
| Model | NSR201MXT5G |
| Width | 0.65mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | X2-DFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Pb-Free, RoHS, Halide Free |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 50mA |
| Peak Reverse Repetitive Voltage Vrrm | 2V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 10μA |
| Maximum Forward Voltage Vf | 0.32V |
| onsemi 2 V 50 mA Diode Schottky 2-Pin X2-DFN NSR201MXT5GBrand | onsemi |
Key Features
- The diode features a maximum continuous forward current of 50 mA for reliable operation.
- It supports a peak reverse repetitive voltage of 2 V for enhanced circuit protection.
- The device has a small forward voltage of 0.32 V to reduce power loss.
- Operates efficiently within a temperature range of -55°C to 150°C for durability in diverse environments.
- Its tiny 1.05 x 0.65 x 0.35 mm package contributes to PCB downsizing and integration in space-sensitive designs.
- Single diode Schottky configuration is optimized for high frequency applications, including mixers and power detectors.
- Complies with Pb-Free, RoHS, and Halide Free standards, supporting environmental compliance.
- Manufactured in China with a premium onsemi quality assurance.
Product Description
onsemi NSR201MXT5G is a Schottky barrier diode designed for high-frequency electronic applications requiring ultra-small form factor and excellent electrical performance.
This 2 V, 50 mA diode is housed in a compact 2-pin X2-DFN surface mount package measuring approximately 1.05 mm in length, 0.65 mm in width, and 0.35 mm in height, making it one of the smallest in its class for PCB space savings.
Capable of withstanding peak reverse voltages of 2 V and continuous currents up to 50 mA, it ensures stable operation even in demanding RF environments.
The diode’s low forward voltage of 0.32 V minimizes power dissipation, enhancing circuit efficiency, while the interterminal capacitance of 0.15 pF limits signal loss, making it ideal for RF mixers and power detector circuits often used in WiFi devices and other submillimeter wave applications.
Operating temperature ranges from -55°C to 150°C, allowing the diode to function reliably under various environmental conditions.
The NSR201MXT5G meets stringent environmental standards including Pb-Free, RoHS, and halide free certifications, supporting green manufacturing and end-user compliance requirements.
Applications include power detection in WiFi equipment, mixers for communication devices, and sensors utilized in smartphones and IoT sensors. The diode’s small interterminal capacitance reduces parasitic effects for improved high-frequency response.
Low forward voltage aids in achieving low signal loss in sensitive circuits. The compact X2-DFN package enables device miniaturization and improved PCB integration. Pb-Free, RoHS compliant for environmentally responsible design and manufacturing.
Ideal for use in high-frequency, submillimeter wave, and WiFi application end-products.
Choose onsemi NSR201MXT5G to enhance your electronic circuit designs where performance and miniaturization are critical. Explore more electronic components in this category at EnvMart to support your industrial and lab needs.
Explore more products in our Schottky Diode category.
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Frequently Asked Questions
The maximum continuous forward current of the NSR201MXT5G is 50 mA, ensuring reliable operation in various applications.
This diode supports a peak reverse repetitive voltage of 2 V, providing enhanced circuit protection.
The maximum forward voltage drop for this Schottky diode is 0.32 V, which helps to minimize power loss in circuits.
The dimensions of the X2-DFN package are approximately 1.05 mm in length, 0.65 mm in width, and 0.35 mm in height.
The NSR201MXT5G operates efficiently within a temperature range of -55°C to 150°C, making it suitable for diverse environments.
This model features a single diode Schottky configuration, optimized for high frequency applications.
The interterminal capacitance of this diode is 0.15 pF, which helps limit signal loss in high-frequency applications.
The NSR201MXT5G complies with Pb-Free, RoHS, and Halide Free standards, supporting environmental compliance.
This diode is suitable for applications including power detection in WiFi equipment and mixers for communication devices.
The maximum peak reverse current for the NSR201MXT5G is 10 μA, ensuring minimal leakage in applications.
This diode has a pin count of 2, facilitating its use in compact electronic designs.
This Schottky diode is manufactured in China, adhering to onsemi's quality assurance standards.
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