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onsemi 1200 V 50 A Silicon Carbide Schottky Diode 3-Pin TO-247 FFSH40120ADN-F085
Specifications
| Country of Origin | China |
|---|---|
| Diameter | 6.85mm |
| Brand | onsemi |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | FFSH40120ADN-F085 |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Maximum Continuous Forward Current If | 50A |
| Peak Reverse Repetitive Voltage Vrrm | 1200V |
| Diode Configuration | Dual Common Cathode |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 400μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1.19kA |
| Maximum Forward Voltage Vf | 1.75V |
| onsemi 1200 V 50 A Diode Schottky 3-Pin TO-247 FFSH40120ADN-F085Brand | onsemi |
Key Features
- Silicon Carbide technology ensures superior switching performance and high reliability.
- TO-247 3-pin package enables easy through-hole mounting.
- Maximum junction temperature is 175°C for robust thermal performance.
- No reverse recovery current enhances system efficiency and reduces EMI.
- Complies with automotive standard AEC-Q101 for automotive electronic suitability.
- Peak non-repetitive forward surge current capacity is 1.19 kA.
- Compact dimensions of 20.82mm height and 15.87mm length support high power density designs.
- Operating temperature range from -55°C to 175°C enables wide environmental use.
Product Description
onsemi FFSH40120ADN-F085 is a Silicon Carbide (SiC) Schottky diode designed for high power electronic applications requiring 1200 V voltage and 50 A maximum continuous forward current. Equipped with a TO-247 3-pin through-hole package, this diode features superior switching performance without reverse recovery current, contributing to increased efficiency and reduced electromagnetic interference (EMI) in industrial, automotive, and power conversion systems.
This high-performance diode offers a maximum junction temperature of 175°C and supports surge currents up to 1.19 kA, making it suitable for demanding applications such as Automotive HEV/EV onboard chargers and DC-DC converters. Its wide operating temperature range (-55°C to 175°C) ensures reliable operation in harsh environments.
The dual common cathode configuration enables efficient rectification with low forward voltage drop (maximum 1.75 V), improving overall system power density. The device conforms to automotive standard AEC-Q101, assuring quality and robustness in automotive electronics.
Additional features include compact physical dimensions (20.82 mm height, 15.87 mm length, and 4.82 mm width) that help reduce system size and cost. Its silicon carbide structure offers no forward recovery, allowing fast switching and higher frequency operation compared to traditional silicon diodes.
Silicon Carbide (SiC) Schottky diode technology for enhanced performance and reliability. Robust thermal and surge current handling capabilities up to 175°C and 1.19 kA, respectively. Automotive grade AEC-Q101 certification ensures suitability for automotive power electronics.
Compact TO-247 3-pin package for ease of integration in power modules. Wide operating temperature range supports industrial and automotive environments. High voltage and current ratings (1200 V, 50 A) meet demanding power needs.
Minimal switching losses with no reverse or forward recovery. Applications include automotive onboard chargers, DC-DC converters, and industrial power supplies.
This onsemi Silicon Carbide Schottky Diode is ideal for engineers and designers seeking high efficiency, high reliability power semiconductor solutions in automotive and industrial applications. Browse more semiconductor components and power electronics at EnvMart for your specialized electronics projects.
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Frequently Asked Questions
The maximum continuous forward current of this diode is 50 A.
The peak reverse repetitive voltage rating is 1200 V.
This diode comes in a TO-247 3-pin package, designed for through-hole mounting.
The operating temperature range is from -55°C to 175°C.
The maximum forward voltage drop is 1.75 V.
The peak non-repetitive forward surge current capacity is 1.19 kA.
This diode complies with the automotive standard AEC-Q101.
The diode features a dual common cathode configuration.
The dimensions are 20.82 mm in height, 15.87 mm in length, and 4.82 mm in width.
Silicon carbide technology provides superior switching performance and eliminates reverse recovery current, enhancing system efficiency and reducing EMI.
This diode is suitable for applications such as automotive HEV/EV onboard chargers and DC-DC converters.
The peak reverse current rating is 400 μA.
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