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Microchip N-Channel Enhancement Mode MOSFET 310 mA 60 V TO-92 Through Hole 3-Pin VN10KN3-G
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 5.33mm |
| Length | 5.08mm |
| Model | VN10KN3-G |
| Width | 4.06mm |
| Mount Type | Through Hole |
| Series | VN10K |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 310mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 7.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 800mV |
Key Features
- Through-hole mounting with TO-92 package and 3 pins.
- Drain-source resistance of 7.5 ohms at Vgs 10V ensuring efficient conduction.
- Maximum power dissipation of 1W for reliable thermal performance.
- Wide operating temperature range from -55°C to 150°C.
- Enhancement mode transistor with vertical DMOS and silicon gate technology.
- High input impedance and low power drive requirements.
- Free from thermal runaway and secondary breakdown.
- Applications include amplifiers, converters, motor controls, power supplies, and switching circuits.
Product Description
Microchip VN10KN3-G is a high-quality N-Channel MOSFET designed for use in electronic, industrial, and power applications. This enhancement mode transistor offers a continuous drain current of 310 mA and a maximum drain-source voltage of 60 V, packaged in a TO-92 through-hole form factor with 3 pins. It features a maximum drain-source resistance of 7.5 Ω at a gate-source voltage of 10 V, ensuring efficient electrical performance in switching and amplification circuits.
Built with advanced vertical DMOS technology and a silicon gate manufacturing process, the VN10KN3-G provides high input impedance and excellent thermal stability. The device operates reliably over a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 1 W. The MOSFET is free from thermal runaway and secondary breakdown, enhancing device durability and performance longevity.
This transistor is optimized for low switching and conduction losses, making it suitable for applications in industrial motor controllers, power supplies, relays, drivers, amplifiers, and converters. Its integral source-drain diode and low gate drive requirements enable efficient and reliable operation in compact and complex electronic designs.
The VN10KN3-G package dimensions include a height of 5.33 mm, width of 4.06 mm, and length of 5.08 mm. It complies with recognized standards to ensure quality and performance consistency.
Through-hole TO-92 package with 3 pins. 310 mA maximum continuous drain current. 60 V maximum drain-source voltage. Low Rds(on) of 7.5 Ω at Vgs=10 V for efficient conduction. Operates reliably between -55°C and 150°C. Enhancement mode vertical DMOS structure.
Integral source-drain diode for switching performance. Suitable for various industrial and electronic circuit applications.
Ideal for use in industrial, laboratory, construction, and manufacturing settings requiring reliable semiconductor switching components. Explore more components in the MOSFET category at EnvMart for diverse electronic needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 310 mA.
The VN10KN3-G has a maximum drain-source voltage of 60 V.
This model is packaged in a TO-92 form factor and features a through-hole mounting style.
The drain-source resistance at Vgs of 10 V is 7.5 Ω.
This MOSFET operates reliably over a temperature range from -55°C to 150°C.
The maximum power dissipation for the VN10KN3-G is 1 W.
It uses an N-channel enhancement mode.
The dimensions are height 5.33 mm, width 4.06 mm, and length 5.08 mm.
The maximum gate-source voltage is 30 V.
This model is suitable for applications including amplifiers, converters, motor controls, power supplies, and switching circuits.
It complies with ANSI/ESD S20.20:2014 and BS EN 61340-5-1:2007.
This model features an integral source-drain diode for improved switching performance.
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