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Microchip N-Channel Enhancement Mode MOSFET 3 A, 1 W Power Dissipation, 3-Pin TO-92 TP0606N3-G

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Microchip N-Channel Enhancement Mode MOSFET 3 A, 1 W Power Dissipation, 3-Pin TO-92 TP0606N3-G

Name: Microchip N-Channel Enhancement Mode MOSFET 3 A, 1 W Power Dissipation, 3-Pin TO-92 TP0606N3-G
Brand: Microchip
SKU: 244278
Price: 0.94 USD
Availability: InStock

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Category MOSFET Brand Microchip Condition New

Specifications

Country of Origin	United States
Brand	Microchip
Model	TP0606N3-G
Mount Type	Through Hole
Maximum Operating Temperature	150°C
Package Type	TO-92
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	3A
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1W
Forward Voltage Vf	1.8V

Key Features

This MOSFET operates in enhancement mode with a vertical DMOS structure for reliable switching performance.
The device has a low threshold voltage of 2.0 V maximum, ensuring efficient turn-on behavior.
It features a high input impedance and low input capacitance of typically 100 pF for fast switching speeds.
The package is the through-hole TO-92 type with 3 pins for easy PCB mounting and integration.
Wide operating temperature range from -55°C to 150°C enables use in diverse industrial and commercial applications.
Forward voltage is 1.8 V, optimized for low conduction losses during operation.
This MOSFET is free from secondary breakdown and thermal runaway, improving operational safety.
Ideal for switching and amplifying applications requiring low threshold voltage and high breakdown voltage.

Product Description

Microchip TP0606N3-G N-Channel Enhancement Mode MOSFET in a 3-pin TO-92 package is designed for power handling and switching in various electronics applications. With a maximum continuous drain current of 3 A and a power dissipation capacity of 1 W, this device offers robust performance for industrial, electronic component assemblies, and general-purpose power switching tasks. The MOSFET's vertical DMOS silicon-gate structure provides advantages including high input impedance, fast switching capabilities, and excellent thermal stability.

The device operates reliably over a wide temperature range from -55°C to a maximum of 150°C, making it suitable for harsh environments. Featuring a low threshold voltage maximum of 2.0 V and a typical input capacitance of only 100 pF, it delivers efficient switching performance with minimal power loss. The forward voltage drop is optimized at 1.8 V to reduce conduction losses.

Constructed as an enhancement mode transistor, this MOSFET is normally off when the gate voltage is zero, increasing safety and reliability in circuit designs. Its 3-pin TO-92 through-hole mounting package facilitates ease of PCB assembly and prototyping in both industrial and educational applications.

This MOSFET provides high breakdown voltage paired with low input and output leakage currents. It is free from secondary breakdown and thermal runaway, ensuring long-term durability and stable performance under load. Common applications include power amplifiers, switching regulators, and load switching in embedded systems.

Designed for use in industrial automation, power control equipment, telecommunications, and consumer electronics. Manufactured in the United States, this component meets stringent quality and reliability standards.

This Microchip N-Channel MOSFET TP0606N3-G offers an excellent balance of power handling, speed, and efficiency in a compact TO-92 form factor. Discover more components and semiconductors in the Electronics & Electricals category on EnvMart for your industrial and laboratory needs.